Why quantum dot simulation domain must contain multi-million atoms?

11 Jan 2013 | Online Presentations | Contributor(s): Muhammad Usman

The InGaAs quantum dots obtained from the self-assembly growth process are heavily strained. The long-range strain and piezoelectric fields significantly modifies the electronic structure of the …

https://nanohub.org/resources/16192

DBR Laser Simulator

07 Sep 2012 | Tools | Contributor(s): Nikhil Sancheti, Lynford Goddard, Christopher Adam Edwards

Describes properties of a GaAs/AlGaAs DBR laser

https://nanohub.org/resources/dbrlaser

Quantitative Modeling and Simulation of Quantum Dots

16 Jul 2010 | Notes | Contributor(s): Muhammad Usman

Quantum dots grown by self-assembly process are typically constructed by 50,000 to 5,000,000 structural atoms which confine a small, countable number of extra electrons or holes in a space that is …

https://nanohub.org/resources/9332

Quantum Dot Wave Function (Quantum Dot Lab)

02 Feb 2011 | Animations | Contributor(s): Gerhard Klimeck, David S. Ebert, Wei Qiao

Electron density of an artificial atom. The animation sequence shows various electronic states in an Indium Arsenide (InAs)/Gallium Arsenide (GaAs) self-assembled quantum dot.

https://nanohub.org/resources/10751

Self-Assembled Quantum Dot Structure (pyramid)

01 Feb 2011 | Animations | Contributor(s): Gerhard Klimeck, Insoo Woo, Muhammad Usman, David S. Ebert

Pyramidal InAs Quantum dot. The quantum dot is 27 atomic monolayers wide at the base and 15 atomic monolayers tall.

https://nanohub.org/resources/10730

Quantum Dot Wave Function (still image)

31 Jan 2011 | Animations | Contributor(s): Gerhard Klimeck, David S. Ebert, Wei Qiao

Electron density of an artificial atom. The image shown displays the excited electron state in an Indium Arsenide (InAs) / Gallium Arsenide (GaAs) self-assembled quantum dot.

https://nanohub.org/resources/10692

Self-Assembled Quantum Dot Wave Structure

31 Jan 2011 | Animations | Contributor(s): Gerhard Klimeck, Insoo Woo, Muhammad Usman, David S. Ebert

A 20nm wide and 5nm high dome shaped InAs quantum dot grown on GaAs and embedded in InAlAs is visualized.

https://nanohub.org/resources/10689

Atomistic Modeling and Simulation Tools for Nanoelectronics and their Deployment on nanoHUB.org

16 Dec 2010 | Online Presentations | Contributor(s): Gerhard Klimeck

At the nanometer scale the concepts of device and material meet and a new device is a new material and vice versa. While atomistic device representations are novel to device physicists, the …

https://nanohub.org/resources/10199

Rode's Method: Theory and Implementation

01 Jul 2010 | Teaching Materials | Contributor(s): Dragica Vasileska

This set of teaching materials provides theoretical description of the Rode's method for the low field mobility calculation that is accompanied with a MATLAB code for the low field mobility …

https://nanohub.org/resources/9249

Negative Differential Resistivity Exercise

28 Jun 2010 | Teaching Materials | Contributor(s): Gerhard Klimeck, Parijat Sengupta, Dragica Vasileska

In certain semiconductors such as GaAs and InP the average velocity as a function of field strength displays a maximum followed by a regime of decreasing velocity. Hilsum, Ridley, and Watkins …

https://nanohub.org/resources/9238

Bulk Monte Carlo: Implementation Details and Source Codes Download

01 Jun 2010 | Teaching Materials | Contributor(s): Dragica Vasileska, Stephen M. Goodnick

The Ensemble Monte Carlo technique has been used now for over 30 years as a numerical method to simulate nonequilibrium transport in semiconductor materials and devices, and has been the subject of …

https://nanohub.org/resources/9109

Electronic band structure

09 Apr 2010 | Animations | Contributor(s): Saumitra Raj Mehrotra, Gerhard Klimeck

In solid-state physics, the electronic band structure (or simply band structure) of a solid describes ranges of energy in which an electron is "forbidden" or "allowed". The band structure is also …

https://nanohub.org/resources/8814

Comparison of PCPBT Lab and Periodic Potential Lab

04 Aug 2009 | Online Presentations | Contributor(s): Abhijeet Paul, Samarth Agarwal, Gerhard Klimeck, Junzhe Geng

This small presentation provides information about the comparison performed for quantum wells made of GaAs and InAs in two different tools. This has been done to benchmark the results from completely …

https://nanohub.org/resources/7201

Bulk Monte Carlo Code Described

01 Jul 2008 | Teaching Materials | Contributor(s): Dragica Vasileska

In this tutorial we give implementation details for the bulk Monte Carlo code for calculating the electron drift velocity, velocity-field characteristics and average carrier energy in bulk GaAs …

https://nanohub.org/resources/4843