Tags: GaAs

Resources (1-19 of 19)

  1. Equipment, Techniques, and Growth of Ultra-High Purity AlGaAs-GaAs Heterostructures by Molecular Beam Epitaxy

    26 May 2017 | | Contributor(s):: Geoff Gardner

    In this talk I detail research and investigation into critical equipment and materials engineering issues related to the quality of the fabricated 2DEG systems. I also will present data that demonstrates the critical role gallium purity plays in 2DEG mobility.

  2. Epitaxial Strategies for High Power Optically Pumped Vertical External Cavity Surface Emitting Lasers and Metamorphic Antimonide Solar Cells

    05 Dec 2016 | | Contributor(s):: Ganesh Balakrishnan

    We present antimonide-based photovoltaic cells grown on GaAs and Silicon substrates for use as sub-cells in metamorphic multi-junction solar cells. These antimonide cells, based on GaSb, are designed to absorb near-infrared photons. The GaSb layer is grown on either GaAs or Silicon substrates.

  3. nanoHUB Simulation Activity - Orientations of Common Single Crystal Substrates

    07 Jun 2016 | | Contributor(s):: Tanya Faltens

    NEW Version 2! (10/17/16) Now includes a link to the saved set of simulations, that can be shared instantly with any nanoHUB user.  Other minor edits to update the activity and fix errors. In this activity, you will use Crystal Viewer to create crystal structures with surfaces that are...

  4. ab initio Model for Mobility and Seebeck coefficient using Boltzmann Transport (aMoBT) equation

    11 Jun 2015 | | Contributor(s):: Alireza Faghaninia, Joel Ager (editor), Cynthia S Lo (editor)

    ab initio electronic transport model to calculate low-field electrical mobility and Seebeck coefficient of semiconductors in Boltzmann transport framework.

  5. Exploring New Channel Materials for Nanoscale CMOS

    28 Jun 2013 | | Contributor(s):: Anisur Rahman

    The improved transport properties of new channel materials, such as Ge and III-V semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the performance of nanoscale CMOS devices. Novel process techniques, such as ALD, high-# dielectrics,...

  6. Why quantum dot simulation domain must contain multi-million atoms?

    11 Jan 2013 | | Contributor(s):: Muhammad Usman

    The InGaAs quantum dots obtained from the self-assembly growth process are heavily strained. The long-range strain and piezoelectric fields significantly modifies the electronic structure of the quantum dots. This imposes a critical constraint on the minimum size of the simulation domain to...

  7. DBR Laser Simulator

    07 Sep 2012 | | Contributor(s):: Nikhil Sancheti, Lynford Goddard, Christopher Adam Edwards

    Describes properties of a GaAs/AlGaAs DBR laser

  8. Quantitative Modeling and Simulation of Quantum Dots

    16 Jul 2010 | | Contributor(s):: Muhammad Usman

    Quantum dots grown by self-assembly process are typically constructed by 50,000 to 5,000,000 structural atoms which confine a small, countable number of extra electrons or holes in a space that is comparable in size to the electron wavelength. Under such conditions quantum dots can be...

  9. Quantum Dot Wave Function (Quantum Dot Lab)

    02 Feb 2011 | | Contributor(s):: Gerhard Klimeck, David S. Ebert, Wei Qiao

    Electron density of an artificial atom. The animation sequence shows various electronic states in an Indium Arsenide (InAs)/Gallium Arsenide (GaAs) self-assembled quantum dot.

  10. Self-Assembled Quantum Dot Structure (pyramid)

    01 Feb 2011 | | Contributor(s):: Gerhard Klimeck, Insoo Woo, Muhammad Usman, David S. Ebert

    Pyramidal InAs Quantum dot. The quantum dot is 27 atomic monolayers wide at the base and 15 atomic monolayers tall.

  11. Quantum Dot Wave Function (still image)

    31 Jan 2011 | | Contributor(s):: Gerhard Klimeck, David S. Ebert, Wei Qiao

    Electron density of an artificial atom. The image shown displays the excited electron state in an Indium Arsenide (InAs) / Gallium Arsenide (GaAs) self-assembled quantum dot.

  12. Self-Assembled Quantum Dot Wave Structure

    31 Jan 2011 | | Contributor(s):: Gerhard Klimeck, Insoo Woo, Muhammad Usman, David S. Ebert

    A 20nm wide and 5nm high dome shaped InAs quantum dot grown on GaAs and embedded in InAlAs is visualized.

  13. Atomistic Modeling and Simulation Tools for Nanoelectronics and their Deployment on nanoHUB.org

    16 Dec 2010 | | Contributor(s):: Gerhard Klimeck

    At the nanometer scale the concepts of device and material meet and a new device is a new material and vice versa. While atomistic device representations are novel to device physicists, the semiconductor materials modeling community usually treats infinitely periodic structures. Two electronic...

  14. Rode's Method: Theory and Implementation

    01 Jul 2010 | | Contributor(s):: Dragica Vasileska

    This set of teaching materials provides theoretical description of the Rode's method for the low field mobility calculation that is accompanied with a MATLAB code for the low field mobility calculation for GaAs material at different temperatures and different doping concentrations. Note that the...

  15. Negative Differential Resistivity Exercise

    28 Jun 2010 | | Contributor(s):: Gerhard Klimeck, Parijat Sengupta, Dragica Vasileska

    In certain semiconductors such as GaAs and InP the average velocity as a function of field strength displays a maximum followed by a regime of decreasing velocity. Hilsum, Ridley, and Watkins postulated that peculiarities in the band structure of semiconductors would lead to the above...

  16. Bulk Monte Carlo: Implementation Details and Source Codes Download

    01 Jun 2010 | | Contributor(s):: Dragica Vasileska, Stephen M. Goodnick

    The Ensemble Monte Carlo technique has been used now for over 30 years as a numerical method to simulate nonequilibrium transport in semiconductor materials and devices, and has been the subject of numerous books and reviews. In application to transport problems, a random walk is generated to...

  17. Electronic band structure

    09 Apr 2010 | | Contributor(s):: Saumitra Raj Mehrotra, Gerhard Klimeck

    In solid-state physics, the electronic band structure (or simply band structure) of a solid describes ranges of energy in which an electron is "forbidden" or "allowed". The band structure is also often called the dispersion or the E(k) relationship. It is a mathematical relationship between the...

  18. Comparison of PCPBT Lab and Periodic Potential Lab

    04 Aug 2009 | | Contributor(s):: Abhijeet Paul, Samarth Agarwal, Gerhard Klimeck, Junzhe Geng

    This small presentation provides information about the comparison performed for quantum wells made of GaAs and InAs in two different tools. This has been done to benchmark the results from completely two different sets of tools and validate the obtained results. In this presentation we provide...

  19. Bulk Monte Carlo Code Described

    01 Jul 2008 | | Contributor(s):: Dragica Vasileska

    In this tutorial we give implementation details for the bulk Monte Carlo code for calculating the electron drift velocity, velocity-field characteristics and average carrier energy in bulk GaAs materials. Identical concepts with minor details apply to the development of a bulk Monte Carlo code...