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ab initio Model for Mobility and Seebeck coefficient using Boltzmann Transport (aMoBT) equation
11 Jun 2015 | Tools | Contributor(s): Alireza Faghaninia, Joel Ager (editor), Cynthia S Lo (editor)
ab initio electronic transport model to calculate low-field electrical mobility and Seebeck coefficient of semiconductors in Boltzmann transport framework.
Atomistic Modeling and Simulation Tools for Nanoelectronics and their Deployment on nanoHUB.org
16 Dec 2010 | Online Presentations | Contributor(s): Gerhard Klimeck
At the nanometer scale the concepts of device and material meet and a new device is a new material and vice versa. While atomistic device representations are novel to device physicists, the...
Bulk Monte Carlo Code Described
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02 Jul 2008 | Teaching Materials | Contributor(s): Dragica Vasileska
In this tutorial we give implementation details for the bulk Monte Carlo code for calculating the electron drift velocity, velocity-field characteristics and average carrier energy in bulk GaAs...
Bulk Monte Carlo: Implementation Details and Source Codes Download
01 Jun 2010 | Teaching Materials | Contributor(s): Dragica Vasileska, Stephen M. Goodnick
The Ensemble Monte Carlo technique has been used now for over 30 years as a numerical method to simulate nonequilibrium transport in semiconductor materials and devices, and has been the subject...
Comparison of PCPBT Lab and Periodic Potential Lab
10 Aug 2009 | Online Presentations | Contributor(s): Abhijeet Paul, Samarth Agarwal, Gerhard Klimeck, Junzhe Geng
This small presentation provides information about the comparison performed for quantum wells made of GaAs and InAs in two different tools. This has been done to benchmark the results from...
DBR Laser Simulator
08 Sep 2012 | Tools | Contributor(s): Nikhil Sancheti, Lynford Goddard, Christopher Adam Edwards
Describes properties of a GaAs/AlGaAs DBR laser
Electronic band structure
12 Apr 2010 | Animations | Contributor(s): Saumitra Raj Mehrotra, Gerhard Klimeck
In solid-state physics, the electronic band structure (or simply band structure) of a solid describes ranges of energy in which an electron is "forbidden" or "allowed". The band structure is...
Epitaxial Strategies for High Power Optically Pumped Vertical External Cavity Surface Emitting Lasers and Metamorphic Antimonide Solar Cells
05 Dec 2016 | Online Presentations | Contributor(s): Ganesh Balakrishnan
We present antimonide-based photovoltaic cells grown on GaAs and Silicon substrates for use as sub-cells in metamorphic multi-junction solar cells. These antimonide cells, based on GaSb, are...
Equipment, Techniques, and Growth of Ultra-High Purity AlGaAs-GaAs Heterostructures by Molecular Beam Epitaxy
26 May 2017 | Online Presentations | Contributor(s): Geoff Gardner
In this talk I detail research and investigation into critical equipment and materials engineering issues related to the quality of the fabricated 2DEG systems. I also will present data that...
Exploring New Channel Materials for Nanoscale CMOS
28 Jun 2013 | Papers | Contributor(s): Anisur Rahman
The improved transport properties of new channel materials, such as Ge and III-V semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the...
nanoHUB Simulation Activity - Orientations of Common Single Crystal Substrates
07 Jun 2016 | Teaching Materials | Contributor(s): Tanya Faltens
NEW Version 2! (10/17/16) Now includes a link to the saved set of simulations, that can be shared instantly with any nanoHUB user. Other minor edits to update the activity and fix errors. In...
Negative Differential Resistivity Exercise
28 Jun 2010 | Teaching Materials | Contributor(s): Gerhard Klimeck, Parijat Sengupta, Dragica Vasileska
In certain semiconductors such as GaAs and InP the average velocity as a function of field strength displays a maximum followed by a regime of decreasing velocity. Hilsum, Ridley, and Watkins...
Quantitative Modeling and Simulation of Quantum Dots
18 Apr 2011 | Presentation Materials | Contributor(s): Muhammad Usman
Quantum dots grown by self-assembly process are typically constructed by 50,000 to 5,000,000 structural atoms which confine a small, countable number of extra electrons or holes in a space that is...
Quantum Dot Wave Function (Quantum Dot Lab)
02 Feb 2011 | Animations | Contributor(s): Gerhard Klimeck, David S. Ebert, Wei Qiao
Electron density of an artificial atom. The animation sequence shows various electronic states in an Indium Arsenide (InAs)/Gallium Arsenide (GaAs) self-assembled quantum dot.
Quantum Dot Wave Function (still image)
31 Jan 2011 | Animations | Contributor(s): Gerhard Klimeck, David S. Ebert, Wei Qiao
Electron density of an artificial atom. The image shown displays the excited electron state in an Indium Arsenide (InAs) / Gallium Arsenide (GaAs) self-assembled quantum dot.
Rode's Method: Theory and Implementation
06 Jul 2010 | Teaching Materials | Contributor(s): Dragica Vasileska
This set of teaching materials provides theoretical description of the Rode's method for the low field mobility calculation that is accompanied with a MATLAB code for the low field mobility...
Self-Assembled Quantum Dot Structure (pyramid)
02 Feb 2011 | Animations | Contributor(s): Gerhard Klimeck, Insoo Woo, Muhammad Usman, David S. Ebert
Pyramidal InAs Quantum dot. The quantum dot is 27 atomic monolayers wide at the base and 15 atomic monolayers tall.
Self-Assembled Quantum Dot Wave Structure
31 Jan 2011 | Animations | Contributor(s): Gerhard Klimeck, Insoo Woo, Muhammad Usman, David S. Ebert
A 20nm wide and 5nm high dome shaped InAs quantum dot grown on GaAs and embedded in InAlAs is visualized.
Why quantum dot simulation domain must contain multi-million atoms?
11 Jan 2013 | Online Presentations | Contributor(s): Muhammad Usman
The InGaAs quantum dots obtained from the self-assembly growth process are heavily strained. The long-range strain and piezoelectric fields significantly modifies the electronic structure of the...