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Tags: GaAs

Resources (1-15 of 15)

  1. Atomistic Modeling and Simulation Tools for Nanoelectronics and their Deployment on nanoHUB.org

    16 Dec 2010 | Online Presentations | Contributor(s): Gerhard Klimeck

    At the nanometer scale the concepts of device and material meet and a new device is a new material and vice versa. While atomistic device representations are novel to device physicists, the...

    http://nanohub.org/resources/10199

  2. Bulk Monte Carlo Code Described

    01 Jul 2008 | Teaching Materials | Contributor(s): Dragica Vasileska

    In this tutorial we give implementation details for the bulk Monte Carlo code for calculating the electron drift velocity, velocity-field characteristics and average carrier energy in bulk GaAs...

    http://nanohub.org/resources/4843

  3. Bulk Monte Carlo: Implementation Details and Source Codes Download

    01 Jun 2010 | Teaching Materials | Contributor(s): Dragica Vasileska, Stephen M. Goodnick

    The Ensemble Monte Carlo technique has been used now for over 30 years as a numerical method to simulate nonequilibrium transport in semiconductor materials and devices, and has been the subject...

    http://nanohub.org/resources/9109

  4. Comparison of PCPBT Lab and Periodic Potential Lab

    10 Aug 2009 | Online Presentations | Contributor(s): Abhijeet Paul, Samarth Agarwal, Gerhard Klimeck, Junzhe Geng

    This small presentation provides information about the comparison performed for quantum wells made of GaAs and InAs in two different tools. This has been done to benchmark the results from...

    http://nanohub.org/resources/7201

  5. DBR Laser Simulator

    07 Sep 2012 | Tools | Contributor(s): Nikhil Sancheti, Lynford Goddard, Christopher Adam Edwards

    Describes properties of a GaAs/AlGaAs DBR laser

    http://nanohub.org/resources/dbrlaser

  6. Electronic band structure

    12 Apr 2010 | Animations | Contributor(s): Saumitra Raj Mehrotra, Gerhard Klimeck

    In solid-state physics, the electronic band structure (or simply band structure) of a solid describes ranges of energy in which an electron is "forbidden" or "allowed". The band structure is...

    http://nanohub.org/resources/8814

  7. Exploring New Channel Materials for Nanoscale CMOS

    28 Jun 2013 | Papers | Contributor(s): Anisur Rahman

    The improved transport properties of new channel materials, such as Ge and III-V semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the...

    http://nanohub.org/resources/18738

  8. Negative Differential Resistivity Exercise

    28 Jun 2010 | Teaching Materials | Contributor(s): Gerhard Klimeck, Parijat Sengupta, Dragica Vasileska

    In certain semiconductors such as GaAs and InP the average velocity as a function of field strength displays a maximum followed by a regime of decreasing velocity. Hilsum, Ridley, and Watkins...

    http://nanohub.org/resources/9238

  9. Quantitative Modeling and Simulation of Quantum Dots

    18 Apr 2011 | Presentation Materials | Contributor(s): Muhammad Usman

    Quantum dots grown by self-assembly process are typically constructed by 50,000 to 5,000,000 structural atoms which confine a small, countable number of extra electrons or holes in a space that is...

    http://nanohub.org/resources/9332

  10. Quantum Dot Wave Function (Quantum Dot Lab)

    02 Feb 2011 | Animations | Contributor(s): Gerhard Klimeck, David S. Ebert, Wei Qiao

    Electron density of an artificial atom. The animation sequence shows various electronic states in an Indium Arsenide (InAs)/Gallium Arsenide (GaAs) self-assembled quantum dot.

    http://nanohub.org/resources/10751

  11. Quantum Dot Wave Function (still image)

    31 Jan 2011 | Animations | Contributor(s): Gerhard Klimeck, David S. Ebert, Wei Qiao

    Electron density of an artificial atom. The image shown displays the excited electron state in an Indium Arsenide (InAs) / Gallium Arsenide (GaAs) self-assembled quantum dot.

    http://nanohub.org/resources/10692

  12. Rode's Method: Theory and Implementation

    06 Jul 2010 | Teaching Materials | Contributor(s): Dragica Vasileska

    This set of teaching materials provides theoretical description of the Rode's method for the low field mobility calculation that is accompanied with a MATLAB code for the low field mobility...

    http://nanohub.org/resources/9249

  13. Self-Assembled Quantum Dot Structure (pyramid)

    02 Feb 2011 | Animations | Contributor(s): Gerhard Klimeck, Insoo Woo, Muhammad Usman, David S. Ebert

    Pyramidal InAs Quantum dot. The quantum dot is 27 atomic monolayers wide at the base and 15 atomic monolayers tall.

    http://nanohub.org/resources/10730

  14. Self-Assembled Quantum Dot Wave Structure

    31 Jan 2011 | Animations | Contributor(s): Gerhard Klimeck, Insoo Woo, Muhammad Usman, David S. Ebert

    A 20nm wide and 5nm high dome shaped InAs quantum dot grown on GaAs and embedded in InAlAs is visualized.

    http://nanohub.org/resources/10689

  15. Why quantum dot simulation domain must contain multi-million atoms?

    11 Jan 2013 | Online Presentations | Contributor(s): Muhammad Usman

    The InGaAs quantum dots obtained from the self-assembly growth process are heavily strained. The long-range strain and piezoelectric fields significantly modifies the electronic structure of the...

    http://nanohub.org/resources/16192

nanoHUB.org, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.