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Bulk Monte Carlo Code Described
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01 Jul 2008 | | Contributor(s):: Dragica Vasileska
In this tutorial we give implementation details for the bulk Monte Carlo code for calculating the electron drift velocity, velocity-field characteristics and average carrier energy in bulk GaAs materials. Identical concepts with minor details apply to the development of a bulk Monte Carlo code...
Bulk Monte Carlo: Implementation Details and Source Codes Download
01 Jun 2010 | | Contributor(s):: Dragica Vasileska, Stephen M. Goodnick
The Ensemble Monte Carlo technique has been used now for over 30 years as a numerical method to simulate nonequilibrium transport in semiconductor materials and devices, and has been the subject of numerous books and reviews. In application to transport problems, a random walk is generated to...
nanoHUB Simulation Activity - Orientations of Common Single Crystal Substrates
06 Jun 2016 | | Contributor(s):: Tanya Faltens
NEW Version 2! (10/17/16) Now includes a link to the saved set of simulations, that can be shared instantly with any nanoHUB user. Other minor edits to update the activity and fix errors. In this activity, you will use Crystal Viewer to create crystal structures with surfaces that are...
Negative Differential Resistivity Exercise
28 Jun 2010 | | Contributor(s):: Gerhard Klimeck, Parijat Sengupta, Dragica Vasileska
In certain semiconductors such as GaAs and InP the average velocity as a function of field strength displays a maximum followed by a regime of decreasing velocity. Hilsum, Ridley, and Watkins postulated that peculiarities in the band structure of semiconductors would lead to the above...
Rode's Method: Theory and Implementation
01 Jul 2010 | | Contributor(s):: Dragica Vasileska
This set of teaching materials provides theoretical description of the Rode's method for the low field mobility calculation that is accompanied with a MATLAB code for the low field mobility calculation for GaAs material at different temperatures and different doping concentrations. Note that the...