
Exit code 139
Closed  Responses: 1
GaAs with biaxial strain, swept from 3% to +3% produces the following error:
Problem launching job: Program...
http://nanohub.org/answers/question/1217

How extensively have nanoparticles been tested in the field of solar cells?
Closed  Responses: 2
I have seen research that has included silver nanoparticles placed in the wafers of Si. I’ve also seen http://nanohub.org/answers/question/685

Is there a selfconsistent schrodingerpoisson solver on nanohub?
Closed  Responses: 0
I’m new to nanohub, and I’m looking for a selfconsistent schrodingerpoisson solver that can simulate http://nanohub.org/answers/question/619

ab initio Model for Mobility and Seebeck coefficient using Boltzmann Transport (aMoBT) equation
15 May 2015  Tools  Contributor(s): Alireza Faghaninia, Joel Ager (editor), Cynthia S Lo (editor)
ab initio electronic transport model to calculate lowfield electrical mobility and Seebeck coefficient of semiconductors in Boltzmann transport framework.
http://nanohub.org/resources/amobt

Antal Ürmös
http://nanohub.org/members/37332

Atomistic Modeling and Simulation Tools for Nanoelectronics and their Deployment on nanoHUB.org
16 Dec 2010  Online Presentations  Contributor(s): Gerhard Klimeck
At the nanometer scale the concepts of device and material meet and a new device is a new material and vice versa. While atomistic device representations are novel to device physicists, the...
http://nanohub.org/resources/10199

Bulk Monte Carlo Code Described
01 Jul 2008  Teaching Materials  Contributor(s): Dragica Vasileska
In this tutorial we give implementation details for the bulk Monte Carlo code for calculating the electron drift velocity, velocityfield characteristics and average carrier energy in bulk GaAs...
http://nanohub.org/resources/4843

Bulk Monte Carlo: Implementation Details and Source Codes Download
01 Jun 2010  Teaching Materials  Contributor(s): Dragica Vasileska, Stephen M. Goodnick
The Ensemble Monte Carlo technique has been used now for over 30 years as a numerical method to simulate nonequilibrium transport in semiconductor materials and devices, and has been the subject...
http://nanohub.org/resources/9109

Comparison of PCPBT Lab and Periodic Potential Lab
10 Aug 2009  Online Presentations  Contributor(s): Abhijeet Paul, Samarth Agarwal, Gerhard Klimeck, Junzhe Geng
This small presentation provides information about the comparison performed for quantum wells made of GaAs and InAs in two different tools. This has been done to benchmark the results from...
http://nanohub.org/resources/7201

DBR Laser Simulator
07 Sep 2012  Tools  Contributor(s): Nikhil Sancheti, Lynford Goddard, Christopher Adam Edwards
Describes properties of a GaAs/AlGaAs DBR laser
http://nanohub.org/resources/dbrlaser

Electronic band structure
12 Apr 2010  Animations  Contributor(s): Saumitra Raj Mehrotra, Gerhard Klimeck
In solidstate physics, the electronic band structure (or simply band structure) of a solid describes ranges of energy in which an electron is "forbidden" or "allowed". The band structure is...
http://nanohub.org/resources/8814

Exploring New Channel Materials for Nanoscale CMOS
28 Jun 2013  Papers  Contributor(s): Anisur Rahman
The improved transport properties of new channel materials, such as Ge and IIIV semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the...
http://nanohub.org/resources/18738

Negative Differential Resistivity Exercise
28 Jun 2010  Teaching Materials  Contributor(s): Gerhard Klimeck, Parijat Sengupta, Dragica Vasileska
In certain semiconductors such as GaAs and InP the average velocity as a function of field strength displays a maximum followed by a regime of decreasing velocity. Hilsum, Ridley, and Watkins...
http://nanohub.org/resources/9238

Quantitative Modeling and Simulation of Quantum Dots
18 Apr 2011  Presentation Materials  Contributor(s): Muhammad Usman
Quantum dots grown by selfassembly process are typically constructed by 50,000 to 5,000,000 structural atoms which confine a small, countable number of extra electrons or holes in a space that is...
http://nanohub.org/resources/9332

Quantum Dot Wave Function (Quantum Dot Lab)
02 Feb 2011  Animations  Contributor(s): Gerhard Klimeck, David S. Ebert, Wei Qiao
Electron density of an artificial atom. The animation sequence shows various electronic states in an Indium Arsenide (InAs)/Gallium Arsenide (GaAs) selfassembled quantum dot.
http://nanohub.org/resources/10751

Quantum Dot Wave Function (still image)
31 Jan 2011  Animations  Contributor(s): Gerhard Klimeck, David S. Ebert, Wei Qiao
Electron density of an artificial atom. The image shown displays the excited electron state in an Indium Arsenide (InAs) / Gallium Arsenide (GaAs) selfassembled quantum dot.
http://nanohub.org/resources/10692

Rode's Method: Theory and Implementation
06 Jul 2010  Teaching Materials  Contributor(s): Dragica Vasileska
This set of teaching materials provides theoretical description of the Rode's method for the low field mobility calculation that is accompanied with a MATLAB code for the low field mobility...
http://nanohub.org/resources/9249

SelfAssembled Quantum Dot Structure (pyramid)
02 Feb 2011  Animations  Contributor(s): Gerhard Klimeck, Insoo Woo, Muhammad Usman, David S. Ebert
Pyramidal InAs Quantum dot. The quantum dot is 27 atomic monolayers wide at the base and 15 atomic monolayers tall.
http://nanohub.org/resources/10730

SelfAssembled Quantum Dot Wave Structure
31 Jan 2011  Animations  Contributor(s): Gerhard Klimeck, Insoo Woo, Muhammad Usman, David S. Ebert
A 20nm wide and 5nm high dome shaped InAs quantum dot grown on GaAs and embedded in InAlAs is visualized.
http://nanohub.org/resources/10689

Why quantum dot simulation domain must contain multimillion atoms?
11 Jan 2013  Online Presentations  Contributor(s): Muhammad Usman
The InGaAs quantum dots obtained from the selfassembly growth process are heavily strained. The longrange strain and piezoelectric fields significantly modifies the electronic structure of the...
http://nanohub.org/resources/16192