Tags: GaAs

All Categories (1-20 of 21)

  1. Exit code 139

    Closed | Responses: 1

    GaAs with biaxial strain, swept from -3% to +3% produces the following error: Problem launching job: Program...


  2. How extensively have nanoparticles been tested in the field of solar cells?

    Closed | Responses: 2

    I have seen research that has included silver nanoparticles placed in the wafers of Si. I’ve also seen http://nanohub.org/answers/question/685

  3. Is there a self-consistent schrodinger-poisson solver on nanohub?

    Closed | Responses: 0

    I’m new to nanohub, and I’m looking for a self-consistent schrodinger-poisson solver that can simulate http://nanohub.org/answers/question/619

  4. ab initio Model for Mobility and Seebeck coefficient using Boltzmann Transport (aMoBT) equation

    11 Jun 2015 | Tools | Contributor(s): Alireza Faghaninia, Joel Ager (editor), Cynthia S Lo (editor)

    ab initio electronic transport model to calculate low-field electrical mobility and Seebeck coefficient of semiconductors in Boltzmann transport framework.


  5. Antal Ürmös


  6. Atomistic Modeling and Simulation Tools for Nanoelectronics and their Deployment on nanoHUB.org

    16 Dec 2010 | Online Presentations | Contributor(s): Gerhard Klimeck

    At the nanometer scale the concepts of device and material meet and a new device is a new material and vice versa. While atomistic device representations are novel to device physicists, the...


  7. Bulk Monte Carlo Code Described

    02 Jul 2008 | Teaching Materials | Contributor(s): Dragica Vasileska

    In this tutorial we give implementation details for the bulk Monte Carlo code for calculating the electron drift velocity, velocity-field characteristics and average carrier energy in bulk GaAs...


  8. Bulk Monte Carlo: Implementation Details and Source Codes Download

    01 Jun 2010 | Teaching Materials | Contributor(s): Dragica Vasileska, Stephen M. Goodnick

    The Ensemble Monte Carlo technique has been used now for over 30 years as a numerical method to simulate nonequilibrium transport in semiconductor materials and devices, and has been the subject...


  9. Comparison of PCPBT Lab and Periodic Potential Lab

    10 Aug 2009 | Online Presentations | Contributor(s): Abhijeet Paul, Samarth Agarwal, Gerhard Klimeck, Junzhe Geng

    This small presentation provides information about the comparison performed for quantum wells made of GaAs and InAs in two different tools. This has been done to benchmark the results from...


  10. DBR Laser Simulator

    08 Sep 2012 | Tools | Contributor(s): Nikhil Sancheti, Lynford Goddard, Christopher Adam Edwards

    Describes properties of a GaAs/AlGaAs DBR laser


  11. Electronic band structure

    12 Apr 2010 | Animations | Contributor(s): Saumitra Raj Mehrotra, Gerhard Klimeck

    In solid-state physics, the electronic band structure (or simply band structure) of a solid describes ranges of energy in which an electron is "forbidden" or "allowed". The band structure is...


  12. Exploring New Channel Materials for Nanoscale CMOS

    28 Jun 2013 | Papers | Contributor(s): Anisur Rahman

    The improved transport properties of new channel materials, such as Ge and III-V semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the...


  13. nanoHUB Simulation Activity - Orientations of Common Single Crystal Substrates

    07 Jun 2016 | Teaching Materials | Contributor(s): Tanya Faltens

    NEW Version 2! (10/17/16) Now includes a link to the saved set of simulations, that can be shared instantly with any nanoHUB user.  Other minor edits to update the activity and fix...


  14. Negative Differential Resistivity Exercise

    28 Jun 2010 | Teaching Materials | Contributor(s): Gerhard Klimeck, Parijat Sengupta, Dragica Vasileska

    In certain semiconductors such as GaAs and InP the average velocity as a function of field strength displays a maximum followed by a regime of decreasing velocity. Hilsum, Ridley, and Watkins...


  15. Quantitative Modeling and Simulation of Quantum Dots

    18 Apr 2011 | Presentation Materials | Contributor(s): Muhammad Usman

    Quantum dots grown by self-assembly process are typically constructed by 50,000 to 5,000,000 structural atoms which confine a small, countable number of extra electrons or holes in a space that is...


  16. Quantum Dot Wave Function (Quantum Dot Lab)

    02 Feb 2011 | Animations | Contributor(s): Gerhard Klimeck, David S. Ebert, Wei Qiao

    Electron density of an artificial atom. The animation sequence shows various electronic states in an Indium Arsenide (InAs)/Gallium Arsenide (GaAs) self-assembled quantum dot.


  17. Quantum Dot Wave Function (still image)

    31 Jan 2011 | Animations | Contributor(s): Gerhard Klimeck, David S. Ebert, Wei Qiao

    Electron density of an artificial atom. The image shown displays the excited electron state in an Indium Arsenide (InAs) / Gallium Arsenide (GaAs) self-assembled quantum dot.


  18. Rode's Method: Theory and Implementation

    06 Jul 2010 | Teaching Materials | Contributor(s): Dragica Vasileska

    This set of teaching materials provides theoretical description of the Rode's method for the low field mobility calculation that is accompanied with a MATLAB code for the low field mobility...


  19. Self-Assembled Quantum Dot Structure (pyramid)

    02 Feb 2011 | Animations | Contributor(s): Gerhard Klimeck, Insoo Woo, Muhammad Usman, David S. Ebert

    Pyramidal InAs Quantum dot. The quantum dot is 27 atomic monolayers wide at the base and 15 atomic monolayers tall.


  20. Self-Assembled Quantum Dot Wave Structure

    31 Jan 2011 | Animations | Contributor(s): Gerhard Klimeck, Insoo Woo, Muhammad Usman, David S. Ebert

    A 20nm wide and 5nm high dome shaped InAs quantum dot grown on GaAs and embedded in InAlAs is visualized.