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Engineering Disorder in Opto-Electronics
05 Dec 2012 | | Contributor(s):: Jacob B. Khurgin
GaN is a wide bandgap material which can on one hand withstand high power and high temperature operating conditions, and on the other hand has high saturation velocity needed for high frequency operation. This tremendous potential has not been fully realized yet and in this talk it will be shown...
Transformative Power Semiconductor Technologies to Impact 21st Century Energy Economy, and Space and Defense Electronics
22 Sep 2010 | | Contributor(s):: Krishna Shenai
This talk will focus on advanced power semiconductor materials, devices, circuits and systems that are needed in order to address this daunting challenge. Specifically we will discuss emerging silicon and wide bandgap materials and power devices, heterogeneous chip-scale power integration,...
Research Within Vasileska Group
29 Jun 2010 | | Contributor(s):: Dragica Vasileska
This presentation outlines recent progress in reseach within Vasileska group in the area of random telegraph noise and thermal modeling, and modeling of GaN HEMTs.