All Categories (1-17 of 17)

1. 09 Demonstration of Vertical GaN PN Diode with Step-etched Triple zone JTE

   14 Oct 2020 | | Contributor(s):: Hyun-Soo Lee, Yuxuan Zhang, Zhaoying Chen, Mohammad Wahidur Rahman, Hongping Zhao, Siddharth Rajan

   We have demonstrated significantly improved BV of vertical GaN PN diode with STJTE without any degradation of forward characteristics. This is the first demonstration of a step-etched multiple zone edge termination for III-Nitride technology.

2. 12 The Influence of the Gate Trench Orientation to the crystal Plane on the Conduction Properties of Vertical GaN MISFETs for Laser Driving Applications

   18 Sep 2020 | | Contributor(s):: E. Bahat Treidel, O. Hilt, H. Christopher, A. Klehr, A. Ginolas, A. Liero, J. Würfl

   In this work the development of vertical GaN MISFET technology is focused on pulsed laser driving applications with maximum voltages < 100 V (Fig. 1). Drivers for pulsed lasers are required to deliver very high currents up to 250 A in very short pulse lengths of 3 ns to 10 ns [4].

3. 25 Linearity by Synthesis: An Intrinsically Linear AlGaN/GaN-on-Si Transistor with OIP3/(F-1)PDC of 10.1 at 30 GHz

   21 Sep 2020 | | Contributor(s):: Woojin Choi, Venkatesh Balasubramanian, Peter M. Asbeck, Shadi Dayeh

   The concept of an intrinsically synthesizable linear device is demonstrated. It was implemented by changing only the device layout; additional performance gains can be attained by further materials engineering.

4. Has anybody use Padre to simulate GaN devices?

   Q&A|Closed | Responses: 0

   I need GaN parameters in Padre. Could someone share the code of material definition? Thank you very much.

   https://nanohub.org/answers/question/1267

5. Has anybody use Padre to simulate GaN devices?

   Q&A|Closed | Responses: 0

   I need GaN parameters in Padre. Could someone share the code of material definition? Thank you very much.

   https://nanohub.org/answers/question/1268

6. Has anybody use Padre to simulate GaN devices?

   Q&A|Closed | Responses: 0

   I need GaN parameters in Padre. Could someone share the code of material definition? Thank you very much.

   https://nanohub.org/answers/question/1269

7. How extensively have nanoparticles been tested in the field of solar cells?

   Q&A|Closed | Responses: 2

   I have seen research that has included silver nanoparticles placed in the wafers of Si. I’ve also seen GaN...

   https://nanohub.org/answers/question/685

8. Oct 26 2018

   Developing products using GaN on Si Technology – Challenges and Opportunities

   Presented by: Dr. Amitava DasThe advantages of GaN technology for RF and Power Electronics are well documented. This talk will address the next phase of the evolution – technical and economic...

   https://nanohub.org/events/details/1755

9. Engineering Disorder in Opto-Electronics

   05 Dec 2012 | | Contributor(s):: Jacob B. Khurgin

   GaN is a wide bandgap material which can on one hand withstand high power and high temperature operating conditions, and on the other hand has high saturation velocity needed for high frequency operation. This tremendous potential has not been fully realized yet and in this talk it will be shown...

10. 

    Giorgi Tchutchulashvili

    Born in Magnitogorsk, former USSR in 1983.School in Dedoplistskaro, Georgian republic.In 2000 enrolled to Tbilsi State University, Faculty of Physics.Masters degree in 2006, Tbilisi State...

    https://nanohub.org/members/68515

11. 

    Mayank Bulsara

    https://nanohub.org/members/291926

12. MEMS Resonators as an Enabling Technology

    07 Aug 2019 | | Contributor(s):: Dana Weinstein

13. Research Within Vasileska Group

    29 Jun 2010 | | Contributor(s):: Dragica Vasileska

    This presentation outlines recent progress in reseach within Vasileska group in the area of random telegraph noise and thermal modeling, and modeling of GaN HEMTs.

14. 

    Shahed Reza

    https://nanohub.org/members/12894

15. 

    Shigeki Yoshida

    https://nanohub.org/members/318796

16. Transformative Power Semiconductor Technologies to Impact 21st Century Energy Economy, and Space and Defense Electronics

    22 Sep 2010 | | Contributor(s):: Krishna Shenai

    This talk will focus on advanced power semiconductor materials, devices, circuits and systems that are needed in order to address this daunting challenge. Specifically we will discuss emerging silicon and wide bandgap materials and power devices, heterogeneous chip-scale power integration,...

17. 

    yusuf öztürk

    https://nanohub.org/members/133028