Upcoming reboots on Thursday, October 27th, will cause tool sessions to be lost. Sorry for any inconvenience.
Find information on common issues.
Ask questions and find answers from other users.
Suggest a new site feature or improvement.
Check on status of your tickets.
[Poster] MIT Virtual Source GaNFET Model: RF Circuit Design and Experimental Verification
25 May 2016 | Presentation Materials | Contributor(s): Ujwal Radhakrishna
MIT Virtual Source GaN HEMT-High Voltage (MVSG-HV) compact model
29 Aug 2015 | Compact Models | Contributor(s):
By Ujwal Radhakrishna1, Dimitri Antoniadis2
1. Massachusetts Institute of Technology (MIT) 2. Massachusetts Institute of Technology
MIT Virtual Source GaN HEMT-High Voltage (MVSG-HV) model is a charge based physical model for HV-GaN HEMTs suitable for power switching applications.
How to simulate the GaN Power Device model
Closed | Responses: 0
I’m new to device modeling and I want to numerically simulate GaN device equations using...
Modeling Self-Heating Effects in SOI Devices and GaN HEMTs
12 Jun 2013 | Presentation Materials | Contributor(s): Dragica Vasileska
The role of self-heating effects is investigated in SOI devices and GaN HEMTs.
Niraj Man Shrestha
Research Within Vasileska Group
29 Jun 2010 | Online Presentations | Contributor(s): Dragica Vasileska
This presentation outlines recent progress in reseach within Vasileska group in the area of random telegraph noise and thermal modeling, and modeling of GaN HEMTs.