Tags: GaN HEMTs

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  1. [Poster] MIT Virtual Source GaNFET Model: RF Circuit Design and Experimental Verification

    25 May 2016 | Presentation Materials | Contributor(s): Ujwal Radhakrishna

    http://nanohub.org/resources/24241

  2. Nour BOUKORTT

    http://nanohub.org/members/133335

  3. MIT Virtual Source GaN HEMT-High Voltage (MVSG-HV) compact model

    29 Aug 2015 | Compact Models | Contributor(s):

    By Ujwal Radhakrishna1, Dimitri Antoniadis2

    1. Massachusetts Institute of Technology (MIT) 2. Massachusetts Institute of Technology

    MIT Virtual Source GaN HEMT-High Voltage (MVSG-HV) model is a charge based physical model for HV-GaN HEMTs suitable for power switching applications.

    http://nanohub.org/publications/73/?v=1

  4. How to simulate the GaN Power Device model

    Closed | Responses: 0

    Hello All,

    I’m new to device modeling and I want to numerically simulate GaN device equations using...

    http://nanohub.org/answers/question/1317

  5. How to simulate the GaN Power Device model

    Closed | Responses: 0

    Hello All,

    I’m new to device modeling and I want to numerically simulate GaN device equations using...

    http://nanohub.org/answers/question/1316

  6. Modeling Self-Heating Effects in SOI Devices and GaN HEMTs

    12 Jun 2013 | Presentation Materials | Contributor(s): Dragica Vasileska

    The role of self-heating effects is investigated in SOI devices and GaN HEMTs.

    http://nanohub.org/resources/18428

  7. Niraj Man Shrestha

    http://nanohub.org/members/75934

  8. Research Within Vasileska Group

    29 Jun 2010 | Online Presentations | Contributor(s): Dragica Vasileska

    This presentation outlines recent progress in reseach within Vasileska group in the area of random telegraph noise and thermal modeling, and modeling of GaN HEMTs.

    http://nanohub.org/resources/9235