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Alexis V Miranda
Masters student
https://nanohub.org/members/295321
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Semiconductor & graphene mixtures, printable, for FETs, VFETS?
Q&A|Closed | Responses: 2
We tried synthesizing diketopyrroles, and we could not make them.
We have fiddled with P3HT, and we are concerned about its long term compatibility with our ionic liquid...
https://nanohub.org/answers/question/2036
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Ifeanyichukwu Amaechi
https://nanohub.org/members/144368
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Amartya Ghosh
https://nanohub.org/members/140117
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Venkata Abhinav Korada
https://nanohub.org/members/134147
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shreyas venkatesh kulkarni
https://nanohub.org/members/131400
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A Comparative Study of nanoHUB Tools for the Simulation of Carbon-based FETs
03 Sep 2015 | | Contributor(s):: Jose M. de la Rosa
This work compares the different tools available in nanoHUB for the electrical simulation of carbon- based field-effect transistors made up of either carbon nanotubes (CNTs) or graphene. ...
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Fahad Al Mamun
https://nanohub.org/members/125385
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Jinbao Jiang
https://nanohub.org/members/124141
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Praanshu Goyal
https://nanohub.org/members/113833
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Md Zubair Ebne Rafique
https://nanohub.org/members/107495
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Shiv Gopal Yadav
https://nanohub.org/members/104560
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Akshay Kumar Mahadev Arabhavi
https://nanohub.org/members/88213
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R Rajesh kumar
Firsr Started my life as a Electronics and communication Engineer. My fate lead me to become do M.Tech Nano science and Technology Then being a average student transformed my self to a studies boy...
https://nanohub.org/members/84033
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Course on Beyond CMOS Computing
06 Jun 2013 | | Contributor(s):: Dmitri Nikonov
Complementary metal-oxide-semiconductor (CMOS) field effect transistors (FET) underpinned the development of electronics and information technology for the last 30 years. In an amazing saga of development, the semiconductor industry (with a leading role of Intel) has shrunk the size of these...
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[Illinois] AVS Meeting 2012: Dielectric Breakdown Study for High Performance, Reliable Top-gated Large-area Graphene Electronics
04 Jun 2013 | | Contributor(s):: Vinod K. Sangwan
An ultra-thin top-gate dielectric is essential for high-performance large-scale digital and analog electronics based on graphene field-effect transistors (G-FETs). Atomic layer deposition (ALD) has been utilized to grown top-gate dielectrics for high-performance G-FETs. However, ALD requires a...
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How to choose the range of convergence for self-consistent solutions for gnrfet?
Q&A|Closed | Responses: 1
Hi, i’m trying to choose the range of convergence for self-consistent solution of potential(from poisson’s equation) and density ( from NEGF) for graphene nanoribbon field effect...
https://nanohub.org/answers/question/1158
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Trevin Gandhi
https://nanohub.org/members/72030
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Sathiyan S
https://nanohub.org/members/70767
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prativendra singh
https://nanohub.org/members/70501