[Illinois] AVS Meeting 2012: Dielectric Breakdown Study for High Performance, Reliable Top-gated Large-area Graphene Electronics
04 Jun 2013 | | Contributor(s):: Vinod K. Sangwan
An ultra-thin top-gate dielectric is essential for high-performance large-scale digital and analog electronics based on graphene field-effect transistors (G-FETs). Atomic layer deposition (ALD) has been utilized to grown top-gate dielectrics for high-performance G-FETs. However, ALD requires a...