Course on Beyond CMOS Computing
06 Jun 2013 | | Contributor(s):: Dmitri Nikonov
Complementary metal-oxide-semiconductor (CMOS) field effect transistors (FET) underpinned the development of electronics and information technology for the last 30 years. In an amazing saga of development, the semiconductor industry (with a leading role of Intel) has shrunk the size of these...
[Illinois] AVS Meeting 2012: Dielectric Breakdown Study for High Performance, Reliable Top-gated Large-area Graphene Electronics
04 Jun 2013 | | Contributor(s):: Vinod K. Sangwan
An ultra-thin top-gate dielectric is essential for high-performance large-scale digital and analog electronics based on graphene field-effect transistors (G-FETs). Atomic layer deposition (ALD) has been utilized to grown top-gate dielectrics for high-performance G-FETs. However, ALD requires a...