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Tags: HCI

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  1. ECE 695A Lecture 16: Review Questions

    22 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review Question What is the difference between hot atom dissociation vs. cold atom dissociation?. Many experiments are reported at 77K and 295K. Why these temperatures?. Why is there such...

    http://nanohub.org/resources/17014

  2. ECE 695A Lecture 17: Subthreshold and Idlin Methods

    21 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    http://nanohub.org/resources/16965

  3. ECE 695A Lecture 15R: Review Questions

    20 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review Questions: Why is BTBT tunneling important for OFF-state HCI, but nor for ON-state HCI? What type of bond dissociation dominated DeMOS degradation? Provide two supporting arguments....

    http://nanohub.org/resources/16933

  4. ECE 695A Lecture 14a: Voltage Dependent HCI I

    19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Background and Empirical Observations Theory of Hot Carriers: Hydrodynamic Model Theory of Hot Carriers: Monte Carlo Model Theory of Hot Carriers: Universal...

    http://nanohub.org/resources/16895

  5. ECE 695A Lecture 14b: Voltage Dependent HCI II

    19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Background and Empirical Observations Theory of Hot Carriers: Hydrodynamic Model Theory of Hot Carriers: Monte Carlo Model Theory of Hot Carriers: Universal...

    http://nanohub.org/resources/16896

  6. ECE 695A Lecture 14R: Review Questions

    19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review Questions Why is Isub called a thermometer of hot electron distribution? Why can you not simply measure hot electrons by looking at the drain current? What are the three methods of...

    http://nanohub.org/resources/16897

  7. ECE 695A Lecture 15: Off-state HCI Degradation

    19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: ON vs. OFF State HCI Degradation Origin of hot carriers at off-state SiH vs. SiO – who is getting broken? Voltage acceleration factors by scaling Conclusions

    http://nanohub.org/resources/16919

  8. ECE 695A Lecture 16: Temperature Dependence of HCI

    19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Empirical observations regarding HCI Theory of bond dissociation: MVE vs. RRK Hot carrier dissociation of SiH bonds Hot carrier dissociation of SiO bonds Conclusions

    http://nanohub.org/resources/16920

  9. ECE 695A Lecture 13: Introductory Lecture on HCI Degradation

    19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Background and features of HCI Degradation Phenomenological observations Origin of Hot carriers Theory of Si-H Bond Dissociation Theory of Si-O Bond...

    http://nanohub.org/resources/16887

  10. ECE 695A Lecture 13R: Review Questions

    19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review Questions: Both SiH and SiO are involved in HCI degradation. Give two evidences. Why doesn’t HCI occur during NBTI stress condition? I suggested that HCI curve can shifted...

    http://nanohub.org/resources/16888

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