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MVS III-V HEMT model
01 Dec 2015 | Compact Models | Contributor(s):
By Shaloo Rakheja1, Dimitri Antoniadis1
Massachusetts Institute of Technology (MIT)
The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical...
MVS Nanotransistor Model
The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters.
RF Solid-State Vibrating Transistors
15 Feb 2014 | | Contributor(s):: Dana Weinstein
In this talk, I will discuss the Resonant Body Transistor (RBT), which can be integrated into a standard CMOS process. The first hybrid RF MEMS-CMOS resonators in Si at the transistor level of IBM’s SOI CMOS process, without any post-processing or packaging will be described. ...
what is the use of multi channel layers in HEMT?
Open | Responses: 1
The new HEMT’s like InAlAs/InGaAs/Inp are having number of channels(let’s say 3) with different...