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Tags: HEMT devices

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  1. wht is the s of k.p model in ATLAS.Does it contribute the effect of commpressive strain when In0.53Ga0.47As is grown on In0.5Al0.5As

    Closed | Responses: 0

    http://nanohub.org/answers/question/922

  2. Illinois Nano EP Seminar Series Spring 2010 - Lecture 1: Hetero-epitaxy of III-V Compounds on Silicon Substrates by MOCVD for Device Applications

    23 Feb 2011 | Online Presentations | Contributor(s): Kei May Lau

    III-V compounds have established their niches in optoelectronic, high-frequency and high-speed device applications that cannot be matched by Si electronics. However, Si has been and will remain...

    http://nanohub.org/resources/10567

  3. Lekha Kuchipudi

    http://nanohub.org/members/70852

  4. The History of Semiconductor Heterostructures Research: From Early Double Heterostructure Concept to Modern Quantum Dot Structures

    11 Jul 2011 | Online Presentations | Contributor(s): Zhores I. Alferov

    It would be very difficult today to imagine solid-state physics without semiconductor heterostructures. Semiconductor heterostructures and especially double heterostructures, including quantum...

    http://nanohub.org/resources/11436

  5. Theodore Chandra

    http://nanohub.org/members/105987

  6. Umesh Prasad Gomes

    M.ScJadavpur UniversityJadavpur University2009Electronic Science81.9B.ScNorth Bengal UniversitySt.Joseph’s College2007Physics64.5Higher SecondaryISCVidya Vikash...

    http://nanohub.org/members/57901

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