Tags: High-k

All Categories (1-4 of 4)

  1. Effect of the High-k Dielectric/Semiconductor Interface on Electronic Properties in Ultra-thin Channels

    15 Oct 2015 | | Contributor(s):: Daniel A. Valencia-Hoyos, Evan Michael Wilson, mark rodwell, Gerhard Klimeck, Michael Povolotskyi

    IWCE 2015 presentation.  Abstract and more information to be added at a later date. As logic devices continue to downscale, an increasing fraction of the channel atoms are in close contact with oxide atoms of the gate. These surface atoms experience a chemical environment that is distinct...

  2. Theory and characterization of random defect formation and its implication in variability of nanoscale transistors

    30 Sep 2011 | | Contributor(s):: Ahmad Ehteshamul Islam

    Over the last 50 years, carrier transport has been the central research topic in the semiconductor area. The outcome was a dramatic improvement in the performance of a transistor, which is one of the basic building blocks in almost all the modern electronic devices. However, nanoscale dimensions...

  3. Esteve Amat


  4. A methodology for SPICE-compatible modeling of nanoMOSFETs

    17 Nov 2010 | | Contributor(s):: Alba Graciela Avila, David Espejo

    An original SPICE-compatible model for Intel's 45nm High-K MOSFET is presented. It takes into account some Quantum-Mechanical Effects that occur at small scale like Channel Length Modulation (CLM), Threshold Voltage variation and Velocity saturation, and is the first in his class that is not...