Tags: high-k gate dielectrics

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  1. 47 Electrostatic Engineering in BaTiO3/β-Ga2O3 Heterostructure Field Effect Transistors

    14 Oct 2020 | | Contributor(s):: Nidhin Kurian Kalarickal, Zhanbo Xia, Wyatt Moore, Joe McGlone, Aaron R. Arehart, Steven A. Ringel, Siddharth Rajan

    We report on the design and demonstration of BaTiO3/β-Ga2O3 based lateral field effect transistors with superior breakdown performance. Utilizing the high-k low-k dielectric interface allows significant improvement in electrostatic field management giving a breakdown voltage of 1.1 KV at 5...

  2. Arijit Sengupta

    A motivated individual with an aptitude in leading and managing teams for projects and related work. My goal is to become associated with a company or an university where I can utilize my skills to...

    https://nanohub.org/members/209943

  3. Mohamed Tarek Ghoneim

    Keywords: device physics, flexible electronics, nanotechnology, graphene, nonvolatile memory, reliability, CMOS, physical and electrical characterization, emerging devices, power management, VLSI,...

    https://nanohub.org/members/77955

  4. Theory and characterization of random defect formation and its implication in variability of nanoscale transistors

    30 Sep 2011 | | Contributor(s):: Ahmad Ehteshamul Islam

    Over the last 50 years, carrier transport has been the central research topic in the semiconductor area. The outcome was a dramatic improvement in the performance of a transistor, which is one of the basic building blocks in almost all the modern electronic devices. However, nanoscale dimensions...