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BTI Simulator for Two-Stage Model
27 Jun 2017 | | Contributor(s):: Rakesh P Rao, Narendra Parihar, Souvik Mahapatra
This simulator calculates the kinetics associated with trapping and trap generation during Negative Bias Temperature Instability (NBTI) in SiO2 (or SiON) based Si p-MOSFETs. The calculations are based on the"Two-Stage Model". The simulator can calculate threshold voltage...
On the Resolution of Ultra-fast NBTI Measurements and Reaction-Diffusion Theory
30 Dec 2009 | | Contributor(s):: Ahmad Ehteshamul Islam, Souvik Mahapatra, Muhammad A. Alam
Reaction-Diffusion (R-D) theory, well-known to successfully explain most features of NBTI stress, is perceived to fail in explaining NBTI recovery. Several efforts have been made to understand differences between NBTI relaxation measured using ultra-fast methods and that predicted by R-D theory....