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Tags: III-V HEMTs

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  1. MIT Virtual Source GaN HEMT-High Voltage (MVSG-HV) compact model

    29 Aug 2015 | Compact Models | Contributor(s):

    By Ujwal Radhakrishna1, Dimitri Antoniadis2

    1. Massachusetts Institute of Technology (MIT) 2. Massachusetts Institute of Technology

    MIT Virtual Source GaN HEMT-High Voltage (MVSG-HV) model is a charge based physical model for HV-GaN HEMTs suitable for power switching applications.

    http://nanohub.org/publications/73/?v=1

  2. Nanoelectronic Modeling Lecture 41: Full-Band and Atomistic Simulation of Realistic 40nm InAs HEMT

    05 Aug 2010 | Online Presentations | Contributor(s): Gerhard Klimeck, Neerav Kharche, Neophytos Neophytou, Mathieu Luisier

    This presentation demonstrates the OMEN capabilities to perform a multi-scale simulation of advanced InAs-based high mobility transistors. Learning Objectives: Quantum Transport...

    http://nanohub.org/resources/9285

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