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Tags: III-V HEMTs

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  1. Nanoelectronic Modeling Lecture 41: Full-Band and Atomistic Simulation of Realistic 40nm InAs HEMT

    05 Aug 2010 | Online Presentations | Contributor(s): Gerhard Klimeck, Neerav Kharche, Neophytos Neophytou, Mathieu Luisier

    This presentation demonstrates the OMEN capabilities to perform a multi-scale simulation of advanced InAs-based high mobility transistors. Learning Objectives: Quantum Transport...

    http://nanohub.org/resources/9285

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