Tags: III-V HEMTs

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  1. Asifali Mir

    As simple as QM

    https://nanohub.org/members/214226

  2. David Christopher Horton

    https://nanohub.org/members/168110

  3. MIT Virtual Source GaN HEMT-High Voltage (MVSG-HV) compact model

    29 Aug 2015 | Compact Models | Contributor(s):

    By Ujwal Radhakrishna1, Dimitri Antoniadis2

    1. Massachusetts Institute of Technology (MIT) 2. Massachusetts Institute of Technology

    MIT Virtual Source GaN HEMT-High Voltage (MVSG-HV) model is a charge based physical model for HV-GaN HEMTs suitable for power switching applications.

    https://nanohub.org/publications/73/?v=1

  4. Nanoelectronic Modeling Lecture 41: Full-Band and Atomistic Simulation of Realistic 40nm InAs HEMT

    05 Aug 2010 | | Contributor(s):: Gerhard Klimeck, Neerav Kharche, Neophytos Neophytou, Mathieu Luisier

    This presentation demonstrates the OMEN capabilities to perform a multi-scale simulation of advanced InAs-based high mobility transistors.Learning Objectives:Quantum Transport Simulator Full-Band and Atomistic III-V HEMTs Performance Analysis Good Agreement with Experiment Some Open Issues...

  5. Trupti Ranjan Lenka

    Dr. Lenka works as an Associate Professor in Electronics and Communication Engineering at the National Institute of Technology Silchar, Assam. He received Ph.D. in Microelectronics Engineering from...

    https://nanohub.org/members/28897