Tags: III-V Semiconductors

Resources (1-5 of 5)

  1. Simulation and Admittance Analysis for Advanced Metal-Insulator-Semiconductor Characterization

    23 Feb 2014 | Tools | Contributor(s): Alex Grede

    Non-parabolic DOS simulation of III-V MISCAPs with impurity ionization effects and ability to view components of channel capacitance.

    http://nanohub.org/resources/samis

  2. III-V Nanoscale MOSFETS: Physics, Modeling, and Design

    28 Jun 2013 | Papers | Contributor(s): Yang Liu

    As predicted by the International Roadmap for Semiconductors (ITRS), power consumption has been the bottleneck for future silicon CMOS technology scaling. To circumvent this limit, researchers are...

    http://nanohub.org/resources/18694

  3. Device Physics Studies of III-V and Silicon MOSFETS for Digital Logic

    28 Jun 2013 | Papers | Contributor(s): Himadri Pal

    III-V's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before III-V's can...

    http://nanohub.org/resources/18697

  4. Quantum and Atomistic Effects in Nanoelectronic Transport Devices

    28 Jun 2013 | Papers | Contributor(s): Neophytos Neophytou

    As devices scale towards atomistic sizes, researches in silicon electronic device technology are investigating alternative structures and materials. As predicted by the International Roadmap for...

    http://nanohub.org/resources/18705

  5. Exploring New Channel Materials for Nanoscale CMOS

    28 Jun 2013 | Papers | Contributor(s): Anisur Rahman

    The improved transport properties of new channel materials, such as Ge and III-V semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the...

    http://nanohub.org/resources/18738