Tags: III-V Semiconductors

Resources (1-8 of 8)

  1. Thermal Conductivity of III-V Semiconductor Superlattices

    25 Jan 2016 | Online Presentations | Contributor(s): Song Mei, Zlatan Aksamija, Irena Knezevic

    IWCE 2015 presentation.  An InGaAs/InAlAs superlattice (SL) on an InP substrate is the mainstream material system for mid- IR quantum cascade lasers (QCL). The thermal conductivity tensor of...

    http://nanohub.org/resources/23177

  2. Mode Space Tight Binding Model for Ultra-Fast Simulations of III-V Nanowire MOSFETs and Heterojunction TFETs

    13 Nov 2015 | Online Presentations | Contributor(s): Aryan Afzalian, Jun Huang, Hesameddin Ilatikhameneh, Santiago Alonso Perez Rubiano, Tillmann Christoph Kubis, Michael Povolotskyi, Gerhard Klimeck

    IWCE 2015 presentation.  we explore here the suitability of a mode space tight binding algorithm to various iii-v homo- and heterojunction nanowire devices. we show that in iii-v materials,...

    http://nanohub.org/resources/23094

  3. Nanometer-Scale III-V Electronics: from Quantum-Well Planar MOSFETs to Vertical Nanowire MOSFETs

    05 Oct 2015 | Online Presentations | Contributor(s): Juses A. del Alamo

    This talk will review recent progress as well as challenges confronting III-V electronics for future logic applications with emphasis on the presenter’s research activities at MIT.

    http://nanohub.org/resources/22880

  4. Simulation and Admittance Analysis for Advanced Metal-Insulator-Semiconductor Characterization

    27 Feb 2014 | Tools | Contributor(s): Alex Grede

    Non-parabolic DOS simulation of III-V MISCAPs with impurity ionization effects and ability to view components of channel capacitance.

    http://nanohub.org/resources/samis

  5. III-V Nanoscale MOSFETS: Physics, Modeling, and Design

    28 Jun 2013 | Papers | Contributor(s): Yang Liu

    As predicted by the International Roadmap for Semiconductors (ITRS), power consumption has been the bottleneck for future silicon CMOS technology scaling. To circumvent this limit, researchers are...

    http://nanohub.org/resources/18694

  6. Device Physics Studies of III-V and Silicon MOSFETS for Digital Logic

    28 Jun 2013 | Papers | Contributor(s): Himadri Pal

    III-V's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before III-V's can...

    http://nanohub.org/resources/18697

  7. Quantum and Atomistic Effects in Nanoelectronic Transport Devices

    28 Jun 2013 | Papers | Contributor(s): Neophytos Neophytou

    As devices scale towards atomistic sizes, researches in silicon electronic device technology are investigating alternative structures and materials. As predicted by the International Roadmap for...

    http://nanohub.org/resources/18705

  8. Exploring New Channel Materials for Nanoscale CMOS

    28 Jun 2013 | Papers | Contributor(s): Anisur Rahman

    The improved transport properties of new channel materials, such as Ge and III-V semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the...

    http://nanohub.org/resources/18738