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Tags: III-V Semiconductors

All Categories (1-13 of 13)

  1. Device Physics Studies of III-V and Silicon MOSFETS for Digital Logic

    28 Jun 2013 | Publications | Contributor(s): Himadri Pal

    III-V's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before III-V's can...

    http://nanohub.org/resources/18697

  2. Evan Michael Anderson

    http://nanohub.org/members/40081

  3. Exploring New Channel Materials for Nanoscale CMOS

    28 Jun 2013 | Publications | Contributor(s): Anisur Rahman

    The improved transport properties of new channel materials, such as Ge and III-V semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the...

    http://nanohub.org/resources/18738

  4. III-V Nanoscale MOSFETS: Physics, Modeling, and Design

    28 Jun 2013 | Publications | Contributor(s): Yang Liu

    As predicted by the International Roadmap for Semiconductors (ITRS), power consumption has been the bottleneck for future silicon CMOS technology scaling. To circumvent this limit, researchers are...

    http://nanohub.org/resources/18694

  5. Pengyu Long

    2008~2012 undergraduate student at Huazhong University of Science & Technology2012~Now PhD research assistant at Purdue University

    http://nanohub.org/members/68278

  6. Quantum and Atomistic Effects in Nanoelectronic Transport Devices

    28 Jun 2013 | Publications | Contributor(s): Neophytos Neophytou

    As devices scale towards atomistic sizes, researches in silicon electronic device technology are investigating alternative structures and materials. As predicted by the International Roadmap for...

    http://nanohub.org/resources/18705

  7. Simulation and Admittance Analysis for Advanced Metal-Insulator-Semiconductor Characterization

    23 Feb 2014 | Tools | Contributor(s): Alex Grede

    Non-parabolic DOS simulation of III-V MISCAPs with impurity ionization effects and ability to view components of channel capacitance.

    http://nanohub.org/resources/samis

  8. Yassine Sayad

    http://nanohub.org/members/103336

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