Why quantum dot simulation domain must contain multi-million atoms?

11 Jan 2013 | Online Presentations | Contributor(s): Muhammad Usman

The InGaAs quantum dots obtained from the self-assembly growth process are heavily strained. The long-range strain and piezoelectric fields significantly modifies the electronic structure of the …

https://nanohub.org/resources/16192

Polarization Response of Multi-layer InAs Quantum Dot Stacks

25 Oct 2011 | Online Presentations | Contributor(s): Muhammad Usman

Recent experimental measurements, without any theoretical guidance, showed that isotropic polarization response can be achieved by increasing the number of QD layers in a QD stack. In this work, we …

https://nanohub.org/resources/12312

Quantitative Modeling and Simulation of Quantum Dots

18 Apr 2011 | Notes | Contributor(s): Muhammad Usman

Quantum dots grown by self-assembly process are typically constructed by 50,000 to 5,000,000 structural atoms which confine a small, countable number of extra electrons or holes in a space that is …

https://nanohub.org/resources/9332

Quantum Dot Wave Function (Quantum Dot Lab)

02 Feb 2011 | Animations | Contributor(s): Gerhard Klimeck, David S. Ebert, Wei Qiao

Electron density of an artificial atom. The animation sequence shows various electronic states in an Indium Arsenide (InAs)/Gallium Arsenide (GaAs) self-assembled quantum dot.

https://nanohub.org/resources/10751

Self-Assembled Quantum Dot Structure (pyramid)

02 Feb 2011 | Animations | Contributor(s): Gerhard Klimeck, Insoo Woo, Muhammad Usman, David S. Ebert

Pyramidal InAs Quantum dot. The quantum dot is 27 atomic monolayers wide at the base and 15 atomic monolayers tall.

https://nanohub.org/resources/10730

Quantum Dot Wave Function (still image)

31 Jan 2011 | Animations | Contributor(s): Gerhard Klimeck, David S. Ebert, Wei Qiao

Electron density of an artificial atom. The image shown displays the excited electron state in an Indium Arsenide (InAs) / Gallium Arsenide (GaAs) self-assembled quantum dot.

https://nanohub.org/resources/10692

Self-Assembled Quantum Dot Wave Structure

31 Jan 2011 | Animations | Contributor(s): Gerhard Klimeck, Insoo Woo, Muhammad Usman, David S. Ebert

A 20nm wide and 5nm high dome shaped InAs quantum dot grown on GaAs and embedded in InAlAs is visualized.

https://nanohub.org/resources/10689

InAs: Evolution of iso-energy surfaces for heavy, light, and split-off holes due to uniaxial strain.

25 May 2010 | Animations | Contributor(s): Abhijeet Paul, Denis Areshkin, Gerhard Klimeck

Movie was generated using Band Structure Lab tool at nanoHUB and allows to scan over four parameters: Hole energy measured from the top of the corresponding band (i.e. the origin of energy scales …

https://nanohub.org/resources/9016

Electronic band structure

12 Apr 2010 | Animations | Contributor(s): Saumitra Raj Mehrotra, Gerhard Klimeck

In solid-state physics, the electronic band structure (or simply band structure) of a solid describes ranges of energy in which an electron is "forbidden" or "allowed". The band structure is also …

https://nanohub.org/resources/8814

Comparison of PCPBT Lab and Periodic Potential Lab

10 Aug 2009 | Online Presentations | Contributor(s): Abhijeet Paul, Samarth Agarwal, Gerhard Klimeck, Junzhe Geng

This small presentation provides information about the comparison performed for quantum wells made of GaAs and InAs in two different tools. This has been done to benchmark the results from completely …

https://nanohub.org/resources/7201

What would be the electron effective mass of InAs in its electron valleys in X,Y,Z directions?

Open | Responses: 1

The default values in the Multi gate Nanowire tool for Si effective mass in Valley 1,2,3 in x,y,z directions are 0.19,0.19,0.98; 0.19,0.98,0.19; 0.98,0.19,0.19 respectively. Now if i am going to …

https://nanohub.org/answers/question/56