Tags: InAs

Presentation Materials (1-2 of 2)

  1. TE/TM polarisation response of InAs/GaAs quantum dot bilayers

    22 Oct 2015 | | Contributor(s):: Muhammad Usman

    Quantum dot bilayers are strong candidates for the design of telecom devices working at 1300 nm wavelength range. Here we analyse - both experimentally and theoretically - their optical and polarisation properties.  

  2. Quantitative Modeling and Simulation of Quantum Dots

    18 Apr 2011 | | Contributor(s):: Muhammad Usman

    Quantum dots grown by self-assembly process are typically constructed by 50,000 to 5,000,000 structural atoms which confine a small, countable number of extra electrons or holes in a space that is comparable in size to the electron wavelength. Under such conditions quantum dots can be...