Tags: InAs

Presentation Materials (1-2 of 2)

  1. TE/TM polarisation response of InAs/GaAs quantum dot bilayers

    22 Oct 2015 | Presentation Materials | Contributor(s): Muhammad Usman

    Quantum dot bilayers are strong candidates for the design of telecom devices working at 1300 nm wavelength range. Here we analyse - both experimentally and theoretically - their optical and...

    http://nanohub.org/resources/22973

  2. Quantitative Modeling and Simulation of Quantum Dots

    18 Apr 2011 | Presentation Materials | Contributor(s): Muhammad Usman

    Quantum dots grown by self-assembly process are typically constructed by 50,000 to 5,000,000 structural atoms which confine a small, countable number of extra electrons or holes in a space that is...

    http://nanohub.org/resources/9332