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Tags: InAs

All Categories (1-20 of 24)

  1. Band structure error in InAs UTB devices

    Closed | Responses: 0

    Dear Sir/Madam,

    first of all, I would like to thank you to have developed and made ​​available online this tool. Currently, I’m interested in the study of the band structure of http://nanohub.org/answers/question/1328

  2. Exploring New Channel Materials for Nanoscale CMOS

    28 Jun 2013 | Papers | Contributor(s): Anisur Rahman

    The improved transport properties of new channel materials, such as Ge and III-V semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the...

    http://nanohub.org/resources/18738

  3. Why quantum dot simulation domain must contain multi-million atoms?

    11 Jan 2013 | Online Presentations | Contributor(s): Muhammad Usman

    The InGaAs quantum dots obtained from the self-assembly growth process are heavily strained. The long-range strain and piezoelectric fields significantly modifies the electronic structure of the...

    http://nanohub.org/resources/16192

  4. Polarization Response of Multi-layer InAs Quantum Dot Stacks

    25 Oct 2011 | Online Presentations | Contributor(s): Muhammad Usman

    Recent experimental measurements, without any theoretical guidance, showed that isotropic polarization response can be achieved by increasing the number of QD layers in a QD stack. In this work,...

    http://nanohub.org/resources/12312

  5. Quantitative Modeling and Simulation of Quantum Dots

    18 Apr 2011 | Presentation Materials | Contributor(s): Muhammad Usman

    Quantum dots grown by self-assembly process are typically constructed by 50,000 to 5,000,000 structural atoms which confine a small, countable number of extra electrons or holes in a space that is...

    http://nanohub.org/resources/9332

  6. Quantum Dot Wave Function (Quantum Dot Lab)

    02 Feb 2011 | Animations | Contributor(s): Gerhard Klimeck, David S. Ebert, Wei Qiao

    Electron density of an artificial atom. The animation sequence shows various electronic states in an Indium Arsenide (InAs)/Gallium Arsenide (GaAs) self-assembled quantum dot.

    http://nanohub.org/resources/10751

  7. Self-Assembled Quantum Dot Structure (pyramid)

    02 Feb 2011 | Animations | Contributor(s): Gerhard Klimeck, Insoo Woo, Muhammad Usman, David S. Ebert

    Pyramidal InAs Quantum dot. The quantum dot is 27 atomic monolayers wide at the base and 15 atomic monolayers tall.

    http://nanohub.org/resources/10730

  8. Quantum Dot Wave Function (still image)

    31 Jan 2011 | Animations | Contributor(s): Gerhard Klimeck, David S. Ebert, Wei Qiao

    Electron density of an artificial atom. The image shown displays the excited electron state in an Indium Arsenide (InAs) / Gallium Arsenide (GaAs) self-assembled quantum dot.

    http://nanohub.org/resources/10692

  9. Self-Assembled Quantum Dot Wave Structure

    31 Jan 2011 | Animations | Contributor(s): Gerhard Klimeck, Insoo Woo, Muhammad Usman, David S. Ebert

    A 20nm wide and 5nm high dome shaped InAs quantum dot grown on GaAs and embedded in InAlAs is visualized.

    http://nanohub.org/resources/10689

  10. InAs: Evolution of iso-energy surfaces for heavy, light, and split-off holes due to uniaxial strain.

    25 May 2010 | Animations | Contributor(s): Abhijeet Paul, Denis Areshkin, Gerhard Klimeck

    Movie was generated using Band Structure Lab tool at nanoHUB and allows to scan over four parameters: Hole energy measured from the top of the corresponding band (i.e. the origin of energy...

    http://nanohub.org/resources/9016

  11. Electronic band structure

    12 Apr 2010 | Animations | Contributor(s): Saumitra Raj Mehrotra, Gerhard Klimeck

    In solid-state physics, the electronic band structure (or simply band structure) of a solid describes ranges of energy in which an electron is "forbidden" or "allowed". The band structure is...

    http://nanohub.org/resources/8814

  12. Comparison of PCPBT Lab and Periodic Potential Lab

    10 Aug 2009 | Online Presentations | Contributor(s): Abhijeet Paul, Samarth Agarwal, Gerhard Klimeck, Junzhe Geng

    This small presentation provides information about the comparison performed for quantum wells made of GaAs and InAs in two different tools. This has been done to benchmark the results from...

    http://nanohub.org/resources/7201

  13. What would be the electron effective mass of InAs in its electron valleys in X,Y,Z directions?

    Open | Responses: 1

    The default values in the Multi gate Nanowire tool for Si effective mass in Valley 1,2,3 in x,y,z directions are 0.19,0.19,0.98; 0.19,0.98,0.19; 0.98,0.19,0.19 respectively. Now if i am going...

    http://nanohub.org/answers/question/56

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