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UCSB Graphene Nanoribbon Interconnect Compact Model
20 Apr 2017 | Compact Models | Contributor(s):
By Junkai Jiang1, Kaustav Banerjee1, Wei Cao2
1. University of California, Santa Barbara 2. University of California Santa Barbara
As the (local) interconnect dimension scales down to sub-20 nm, the rapidly increasing metal resistance by barrier layer and surface and grain boundary scatterings, and the diminishing current...
28 Feb 2012 | | Contributor(s):: Emmanuel Jose Ochoa, Stella Quinones
Understand how to calculate the equivalent impedance of circuit elements combined in parallel and/or series, and understand equivalent impedance calculations in rectangular and polar form.
Series and Parallel
17 Feb 2012 | | Contributor(s):: Emmanuel Jose Ochoa, Stella Quinones
Examine the resistance, R, inductance, L, or capacitance, C, of multiple elements in series or in parallel.
Understand the dependence of resistance, R, inductance, L, and capacitance, C, on physical dimensions and material properties.