Tags: InGaAs

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  1. Nanoelectronic Modeling Lecture 32: Strain Layer Design through Quantum Dot TCAD

    04 Aug 2010 | | Contributor(s):: Gerhard Klimeck, Muhammad Usman

    This presentation demonstrates the utilization of NEMO3D to understand complex experimental data of embedded InAs quantum dots that are selectively overgrown with a strain reducing InGaAs layer. Different alloy concentrations of the strain layer tune the optical emission and absorption...

  2. Nanoelectronic Modeling Lecture 31a: Long-Range Strain in InGaAs Quantum Dots

    04 Aug 2010 | | Contributor(s):: Gerhard Klimeck

    This presentation demonstrates the importance of long-range strain in quantum dotsNumerical analysis of the importance of the buffer around the central quantum dot - local band edges – vertical and horizontal extension of the bufferControlled overgrowth can tune the electron energies in the...