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Interface Structure/Surface Morphology of (Co,Fe,Ni)/Cu/Si Thin Films
25 Mar 2014 | | Contributor(s):: Brian Demczyk, R. Naik, A. Lukaszew, G. W. Auner, V. M. Naik
The effects of thin film and interfacial stress on the magnetic properties Fe, Co and Ni films deposited by molecular beam epitaxy on Cu underlayers (Si substrate) were examined, employing transmission,ans scanning probe microscopy and reflection high energy diffraction. It ws found that the...
Kelvin Wei Siang NG
Growth of Cu films on hydrogen terminated Si(lQ0) and Si(lll) surf&es
07 Oct 2011 | | Contributor(s):: Brian Demczyk, R. Naik, G. Auner, C. Kota, U. Rao
We have employed reflection high energy electron diffraction (RHEED) and high resolutiontransmission electron microscopy (HREM) to study Cu films grown on hydrogen terminatedSi( 100) and Si( 111) substrates by molecular beam epitaxy.
Confined Carriers - Interface Roughness Scattering
30 Jun 2011 | | Contributor(s):: Dragica Vasileska
This set of handwritten notes is part of the Semiconductor Transport class.
Scattering rates of confined carriers
20 Jun 2011 | | Contributor(s):: Dragica Vasileska
Scattering rates of acoustic phonon scattering and interface roughness are described for a case of 1D confinement.