Tags: interface structure

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  1. Comparison of strain relaxation in epitaxial Si0.3Ge0.7 films grown on Si(001) and Ge(001)

    07 Oct 2011 | Papers | Contributor(s): Brian Demczyk, R. Naik, G. Auner, C. Kota, U. Rao

    Surface and interfacial strain have been computed for SiGe thin films grown by UHVCVD,based on measurements via transmission electron microscopy and Raman spectroscopy.