Upcoming reboots during the week of October 24 will cause tool sessions to be lost. This notice will be updated with the day and time. Sorry for any inconvenience.
Find information on common issues.
Ask questions and find answers from other users.
Suggest a new site feature or improvement.
Check on status of your tickets.
UCSB 2D Transition-Metal-Dichalcogenide (TMD) FET model
25 Mar 2015 | Compact Models | Contributor(s):
By Wei Cao1, Kaustav Banerjee1
University of California Santa Barbara
a compact model for 2D TMD FET considering the effect of mobility degradation, interface traps, and insufficient doping in the source/drain extension regions
Universality of NBTI-Induced Interface Trap Generation and Its Impact on ID Degradation in Strained/ Unstrained PMOS Transistors
5.0 out of 5 stars
31 Dec 2009 | Online Presentations | Contributor(s): Ahmad Ehteshamul Islam, Muhammad A. Alam
Despite extensive use of strained technology, it is still unclear whether NBTI-induced NIT generation in strained transistors is substantially different from that of unstrained ones. Here, we...