Tags: Interface Trap

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  1. UCSB 2D Transition-Metal-Dichalcogenide (TMD) FET model

    25 Mar 2015 | Compact Models | Contributor(s):

    By Wei Cao1, Kaustav Banerjee1

    University of California Santa Barbara

    a compact model for 2D TMD FET considering the effect of mobility degradation, interface traps, and insufficient doping in the source/drain extension regions

    http://nanohub.org/publications/51/?v=1

  2. Universality of NBTI-Induced Interface Trap Generation and Its Impact on ID Degradation in Strained/ Unstrained PMOS Transistors

    23 Dec 2008 | Online Presentations | Contributor(s): Ahmad Ehteshamul Islam, Muhammad A. Alam

    Despite extensive use of strained technology, it is still unclear whether NBTI-induced NIT generation in strained transistors is substantially different from that of unstrained ones. Here, we...

    http://nanohub.org/resources/6067