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MIT TFET compact model including the impacts of non-idealities
03 May 2017 | Compact Models | Contributor(s):
By Redwan Noor Sajjad1, Ujwal Radhakrishna2, Dimitri Antoniadis1
1. Massachusetts Institute of Technology 2. Massachusetts Institute of Technology (MIT)
We present a physics based compact model for Tunnel Field Effect Transistor (TFET), MIT TFET compact model, that captures the device physics of TFETs including non-idealities such as the interface...
On the Resolution of Ultra-fast NBTI Measurements and Reaction-Diffusion Theory
30 Dec 2009 | Online Presentations | Contributor(s): Ahmad Ehteshamul Islam, Souvik Mahapatra, Muhammad A. Alam
Reaction-Diffusion (R-D) theory, well-known to successfully explain most features of NBTI stress, is perceived to fail in explaining NBTI recovery. Several efforts have been made to understand...
Mobility Variation Due to Interface Trap Generation in Plasma Oxynitrided PMOS Devices
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01 Jul 2008 | Online Presentations | Contributor(s): Ahmad Ehteshamul Islam, Souvik Mahapatra, Muhammad A. Alam
Mobility degradation due to generation of interface
traps, Δµeff(NIT), is a well-known phenomenon that has been
theoretically interpreted by several mobility models. Based on
these analysis, there...