All Categories (1-20 of 44)

1. How to change the electrode material in the adept tool

   Q&A|Closed | Responses: 0

   How to change the electrode material in the tool adept? I can't find the metal contact section in the setting bars.Thanks!

   https://nanohub.org/answers/question/1745

2. How to plot the IV curve for a three layer simulation

   Q&A|Closed | Responses: 0

   I cannot see the option of IV curve in the result part for a three layer simulation.

   Would anyone please tell me how to ask the ADEPT to plot that IV curve for forward...

   https://nanohub.org/answers/question/1271

3. I V characteristic ?

   Q&A|Closed | Responses: 0

   First of thanking you very much for sharing this wonderful tool on PN junction. 

   I am using MATLAB for solving the same kind of configuration of PN junction and got the...

   https://nanohub.org/answers/question/1516

4. Negative biases not working for i-v?

   Q&A|Closed | Responses: 1

   Negative biases are no longer being plotted for i-v calculations as of the most recent update. Is this a bug or is there another way to simulate negative biases now?

   https://nanohub.org/answers/question/1499

5. 

   Abdelaali Fargi

   Abdelaali Fargi received his PhD in Physics of Semiconductor Devices and Electronics from Faculty of Sciences of Monastir (Tunisia) in 2016, the Master of Science Degree in Materials Science and...

   https://nanohub.org/members/56303

6. Chapter 1: A Primer on the MOSFet Simulator on nanoHUB.org

   19 Mar 2020 | | Contributor(s):: Abdussamad Ahmed Muntahi, Dragica Vasileska, Shaikh S. Ahmed

   The MOSFet simulator on nanoHUB.org (http://nanohub.org/resources/mosfet) simulates the equilibrium electrostatics and non-equilibrium current-voltage (I-V) characteristics of i) bulk, ii) dual-gate, and iii) SOI based field effect transistors. In this chapter, we will describe: i) the structure...

7. Device Characterization with the Keithley 4200-SCS

   20 Jan 2011 | | Contributor(s):: Lee Stauffer

   This training session is based on the Keithley 4200-SCS Semiconductor Characterization System. It is intended for beginning to intermediate users. It covers basic concepts, both of the instrument, as well as general measurement considerations.

8. Discussion Session 1 (Lectures 1a, 1b and 2)

   08 Sep 2010 | | Contributor(s):: Supriyo Datta

9. Discussion Session 2 (Lectures 3 and 4)

   08 Sep 2010 | | Contributor(s):: Supriyo Datta

10. ECE 606 L20.1: PN Diode - Band Diagram with Applied Bias

    20 Jul 2023 | | Contributor(s):: Gerhard Klimeck

11. ECE 606 L20.2: PN Diode - Derivation of the Forward Bias Formula

    20 Jul 2023 | | Contributor(s):: Gerhard Klimeck

12. ECE 606 L20.3: PN Diode - Forward Bias - Non-Linear Regime

    20 Jul 2023 | | Contributor(s):: Gerhard Klimeck

13. ECE 606 L20.4: PN Diode - Non-Ideal Effects

    20 Jul 2023 | | Contributor(s):: Gerhard Klimeck

14. ECE 606 L23.1: Schottky Diode - Basics

    20 Jul 2023 | | Contributor(s):: Gerhard Klimeck

15. ECE 606 Lecture 22: MOScap Frequence Response/MOSFET I-V Characteristics

    26 Nov 2012 | | Contributor(s):: Gerhard Klimeck

16. ECE 606 Lecture 23: MOSFET I-V Characteristics/MOSFET Non-Idealities

    26 Nov 2012 | | Contributor(s):: Gerhard Klimeck

17. ECE 606 Lecture 24: MOSFET Non-Idealities

    26 Nov 2012 | | Contributor(s):: Gerhard Klimeck

18. ECE 606 Lecture 35: MOSFET I-V Characteristics I

    out of 5 stars 

    16 Apr 2009 | | Contributor(s):: Muhammad A. Alam

19. ECE 606 Lecture 36: MOSFET I-V Characteristics II

    out of 5 stars 

    28 Apr 2009 | | Contributor(s):: Muhammad A. Alam

20. FETToy

    out of 5 stars 

    14 Feb 2006 | | Contributor(s):: Anisur Rahman, Jing Wang, Jing Guo, Md. Sayed Hasan, Yang Liu, Akira Matsudaira, Shaikh S. Ahmed, Supriyo Datta, Mark Lundstrom

    Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs