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JFETIDG Model for Independent Dual-Gate JFETs
24 Mar 2017 | Compact Models | Contributor(s):
By Colin McAndrew1, Kejun Xia2
1. Freescale Semiconductor 2. NXP Semiconductors
JFETIDG is a compact model for independent dual-gate JFETs. It is also applicable to: resistors with metal shields; the drift region of LDMOS transistors; the collector resistance of vertical...
What can be flat band voltage for a double gate junction less device for p+ poly gate doped at 2 X 10^-14/cm2 and n-type silicon doped at 10^20/cm2?
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