Find information on common issues.
Ask questions and find answers from other users.
Suggest a new site feature or improvement.
Check on status of your tickets.
Alexander Sergeevich Fedotov
Magnetic Tunnel Junction Lab
23 Sep 2013 | | Contributor(s):: Samiran Ganguly, Deepanjan Datta, Chen Shang, Sankarsh Ramadas, Sayeef Salahuddin, Supriyo Datta
Calculate Resistance, Tunneling Magneto Resistance, Spin Torques, and Switching characteristics of a Magnetic Tunnel Junction
Course on Beyond CMOS Computing
06 Jun 2013 | | Contributor(s):: Dmitri Nikonov
Complementary metal-oxide-semiconductor (CMOS) field effect transistors (FET) underpinned the development of electronics and information technology for the last 30 years. In an amazing saga of development, the semiconductor industry (with a leading role of Intel) has shrunk the size of these...
Electric and Magnetic Properties of Multiferroic Oxide Thin Films and Heterostructures
20 Oct 2010 | | Contributor(s):: Pedro Antonio Prieto
Outline:IntroductionPreparation methods for oxide thin filmsOxide thin films and heterostructures Multiferroic materialsBiFeO3, YMnO3, BiMnO3 thin films and FE/FM CompositesConclusions
Anisotropic magnetoresistance in colossal magnetoresistive La1-xSrxMnO3 thin films
03 Sep 2010 | | Contributor(s):: Jeng-Bang (Tony) Yau
We report on magnetic field and temperature dependent measurements of the anisotropic magnetoresistance (AMR) in epitaxial La1-xSrxMnO3 (LSMO) thin flms. While in 3d ferromagnetic alloys increasing the magnetization, either by reducing the temperature or increasing the magnetic field, increases...
Taxonomy of spintronics (a zoo of devices)
out of 5 stars
02 Nov 2006 | | Contributor(s):: Dmitri Nikonov, George Bourianoff
The presentation deals with classification of logic devices based on electron spin as a computational variable. Requirements for logic devices are reviewed. Specifically we focus on a) concatenability (output of one device can drive another) and b) the complete set of Boolean operators (NOT,...