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Alexander Sergeevich Fedotov
http://nanohub.org/members/102671
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Magnetic Tunnel Junction Lab
23 Sep 2013 | | Contributor(s):: Samiran Ganguly, Deepanjan Datta, Chen Shang, Sankarsh Ramadas, Sayeef Salahuddin, Supriyo Datta
Calculate Resistance, Tunneling Magneto Resistance, Spin Torques, and Switching characteristics of a Magnetic Tunnel Junction
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Course on Beyond CMOS Computing
06 Jun 2013 | | Contributor(s):: Dmitri Nikonov
Complementary metal-oxide-semiconductor (CMOS) field effect transistors (FET) underpinned the development of electronics and information technology for the last 30 years. In an amazing saga of development, the semiconductor industry (with a leading role of Intel) has shrunk the size of these...
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Electric and Magnetic Properties of Multiferroic Oxide Thin Films and Heterostructures
20 Oct 2010 | | Contributor(s):: Pedro Antonio Prieto
Outline:IntroductionPreparation methods for oxide thin filmsOxide thin films and heterostructures Multiferroic materialsBiFeO3, YMnO3, BiMnO3 thin films and FE/FM CompositesConclusions
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Anisotropic magnetoresistance in colossal magnetoresistive La1-xSrxMnO3 thin films
03 Sep 2010 | | Contributor(s):: Jeng-Bang (Tony) Yau
We report on magnetic field and temperature dependent measurements of the anisotropic magnetoresistance (AMR) in epitaxial La1-xSrxMnO3 (LSMO) thin flms. While in 3d ferromagnetic alloys increasing the magnetization, either by reducing the temperature or increasing the magnetic field, increases...
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Taxonomy of spintronics (a zoo of devices)
02 Nov 2006 | | Contributor(s):: Dmitri Nikonov, George Bourianoff
The presentation deals with classification of logic devices based on electron spin as a computational variable. Requirements for logic devices are reviewed. Specifically we focus on a) concatenability (output of one device can drive another) and b) the complete set of Boolean operators (NOT,...