Tags: magnetoresistance

All Categories (1-6 of 6)

  1. Alexander Sergeevich Fedotov

    http://nanohub.org/members/102671

  2. Anisotropic magnetoresistance in colossal magnetoresistive La1-xSrxMnO3 thin films

    03 Sep 2010 | | Contributor(s):: Jeng-Bang (Tony) Yau

    We report on magnetic field and temperature dependent measurements of the anisotropic magnetoresistance (AMR) in epitaxial La1-xSrxMnO3 (LSMO) thin flms. While in 3d ferromagnetic alloys increasing the magnetization, either by reducing the temperature or increasing the magnetic field, increases...

  3. Course on Beyond CMOS Computing

    06 Jun 2013 | | Contributor(s):: Dmitri Nikonov

    Complementary metal-oxide-semiconductor (CMOS) field effect transistors (FET) underpinned the development of electronics and information technology for the last 30 years. In an amazing saga of development, the semiconductor industry (with a leading role of Intel) has shrunk the size of these...

  4. Electric and Magnetic Properties of Multiferroic Oxide Thin Films and Heterostructures

    20 Oct 2010 | | Contributor(s):: Pedro Antonio Prieto

    Outline:IntroductionPreparation methods for oxide thin filmsOxide thin films and heterostructures Multiferroic materialsBiFeO3, YMnO3, BiMnO3 thin films and FE/FM CompositesConclusions

  5. Magnetic Tunnel Junction Lab

    23 Sep 2013 | | Contributor(s):: Samiran Ganguly, Deepanjan Datta, Chen Shang, Sankarsh Ramadas, Sayeef Salahuddin, Supriyo Datta

    Calculate Resistance, Tunneling Magneto Resistance, Spin Torques, and Switching characteristics of a Magnetic Tunnel Junction

  6. Taxonomy of spintronics (a zoo of devices)

    02 Nov 2006 | | Contributor(s):: Dmitri Nikonov, George Bourianoff

    The presentation deals with classification of logic devices based on electron spin as a computational variable. Requirements for logic devices are reviewed. Specifically we focus on a) concatenability (output of one device can drive another) and b) the complete set of Boolean operators (NOT,...