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Electro-thermal Properties of Carbon Nanotubes
03 Jan 2019 | | Contributor(s):: Igor Bejenari
A given technical report provides a short review of the existing experimental data and theoretical models related to electro-thermal properties of single-wall (SW) carbon nanotubes (CNT) and describes the temperature dependence of single- and multi-tube carbon nanotube field effect transistors...
Reproducing results of "Thermal transport in SiGe superlattice thin films and nanowires"
27 Mar 2015 | | Contributor(s):: Alejandro Strachan, Jonathan Mark Dunn
In this document we show how to reproduce results in the paper "Thermal transport in SiGe superlattice thin films and nanowires", Keng-hua Lin, and Alejandro Strachan Physical Review B 87, 115302 (2011) using the nanoMATERIALS nanoscale heat transport tool in nanoHUB....
Theoretical studies of rolled-up and wrinkled nanomembranes
20 Feb 2012 | | Contributor(s):: Peter Cendula
PhD thesis along with additional movie files.
Boron Nitride Nanotube Structure
07 Oct 2011 | | Contributor(s):: Brian Demczyk, J. Cumings, A. Zettl
We have used high-resolution transmission electron microscopy to resolve the basal plane structure and chirality relationships in boron nitride nanotubes.
Growth of Cu films on hydrogen terminated Si(lQ0) and Si(lll) surf&es
07 Oct 2011 | | Contributor(s):: Brian Demczyk, R. Naik, G. Auner, C. Kota, U. Rao
We have employed reflection high energy electron diffraction (RHEED) and high resolutiontransmission electron microscopy (HREM) to study Cu films grown on hydrogen terminatedSi( 100) and Si( 111) substrates by molecular beam epitaxy.
Interface structure and surface morphology of (Co, Fe, Ni)/Cu/Si(100) thin films
07 Oct 2011 | | Contributor(s):: Brian Demczyk, V.M. Naik, A. Lukaszew, R. Naik, G. W. Auner
We have examined bilayer Co/Cu, Fe/Cu, and Ni/Cu films deposited by molecular-beam epitaxy onhydrogen-terminated @100# silicon substrates.
Origin of the orientation ratio in sputtered longitudinal media
07 Oct 2011 | | Contributor(s):: Brian Demczyk, J. N. Zhou, G. Choe, E. Stach, E. C. Nelson, U. Dahmen
The surface morphology, thin film microstructure, and crystallography of sputtered longitudinalmedia were examined by atomic force and transmission electron microscopy.
Magnetic properties of magnetron sputtered Co-Cr thin films
07 Oct 2011 | | Contributor(s):: Brian Demczyk, J. O. Artman
The magnetic properties 01 magnetron sputtered CO-22 at.% Cr films of various thickness deposited on glass have been examined, with particular attentionto the various contributions to the film anisotropy
Oxidation Behavior of CoCr Thin Films
07 Oct 2011 | | Contributor(s):: Brian Demczyk
In this work, elemental redistribution of annealed CoCr thin films has been investigated by X-ray photoelectron spectroscopy.
Direct mechanical measurement of the tensile strength and elastic modulus of multiwalled carbon nanotubes
07 Oct 2011 | | Contributor(s):: Brian Demczyk, Y.M. Wang, J. Cumings, M. Hetman, W. Han, A. Zettl. R. O. Ritchie
This work represents the first in-situ measurenment of the tensile strength of a carbon nanotuube.
Comparison of strain relaxation in epitaxial Si0.3Ge0.7 films grown on Si(001) and Ge(001)
Surface and interfacial strain have been computed for SiGe thin films grown by UHVCVD,based on measurements via transmission electron microscopy and Raman spectroscopy.
Lubrication Effects on Head-Disk Spacing Loss
07 Oct 2011 | | Contributor(s):: Brian Demczyk, J. Liu, C. Y. Chen, S. Zhang
The effects of lubrication thickness on the magnetic recording head-media tribology were investigated in this study.
Self-Consistent Properties of Carbon Nanotubes and Hexagonal Arrays as Composite Reinforcements
05 May 2010 | | Contributor(s):: R. Byron Pipes
A self-consistent set of relationships is developed for the physical properties of single walled carbon nanotubes (SWCN) and their hexagonal arrays as a function of the chiral vector integer pair, (n,m). Properties include effective radius, density, principal Young’s modulus, and specific Young’s...
Exploring New Channel Materials for Nanoscale CMOS
out of 5 stars
21 May 2006 | | Contributor(s):: Anisur Rahman
The improved transport properties of new channel materials, such as Ge and III-V semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the performance of nanoscale CMOS devices.Novel process techniques, such as ALD, high-k dielectrics, and...
Device Physics and Simulation of Silicon Nanowire Transistors
20 May 2006 | | Contributor(s):: Jing Wang
As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention from both the semiconductor industry...