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Equipment, Techniques, and Growth of Ultra-High Purity AlGaAs-GaAs Heterostructures by Molecular Beam Epitaxy
26 May 2017 | | Contributor(s):: Geoff Gardner
In this talk I detail research and investigation into critical equipment and materials engineering issues related to the quality of the fabricated 2DEG systems. I also will present data that demonstrates the critical role gallium purity plays in 2DEG mobility.
[Illinois] New directions in III-V MBE: from materials to devices
13 Apr 2017 | | Contributor(s):: Minjoo Larry Lee
9/8/2016MNTL Industry Affiliates Program
Interface Structure/Surface Morphology of (Co,Fe,Ni)/Cu/Si Thin Films
25 Mar 2014 | | Contributor(s):: Brian Demczyk, R. Naik, A. Lukaszew, G. W. Auner, V. M. Naik
The effects of thin film and interfacial stress on the magnetic properties Fe, Co and Ni films deposited by molecular beam epitaxy on Cu underlayers (Si substrate) were examined, employing transmission,ans scanning probe microscopy and reflection high energy diffraction. It ws found that the...