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Learning Module: Micro Pressure Sensors & the Wheatstone Bridge - Instructor Guides
24 Feb 2017 | | Contributor(s):: Southwest Center for Microsystems Education (SCME)
This purpose of this learning module is to allow students the opportunity to explore micro pressure sensors - their applications, design and fabrication, and operation.
Learning Module: Micro Pressure Sensors & the Wheatstone Bridge
This learning module allows you to explore micro and nano-sized pressure sensors - their applications, design and fabrication, and operation. Because the Wheatstone bridge (a specialized electronic circuit) is used as the sensing circuit of such pressure sensors, the module also goes into...
2010 Honorary Symposium for Professor Milton Feng at The Micro and Nano Technology Laboratory UIUC
23 Jul 2010 | | Contributor(s):: Rashid Bashir, Andreas Cangellaris, Omar N Sobh
Symposium honoring Professor Milton Feng on his 60th birthday.
MOSFet Demonstration: MOSFET Device Simulation and Analysis
11 Jun 2009 | | Contributor(s):: Gerhard Klimeck, Benjamin P Haley
This video shows the simulation and analysis of a MOSFET device using the MOSFet tool. Several powerful analytic features of this tool are demonstrated.
MOSCap Demonstration: MOS Capacitor Simulation
This video shows the simulation of a MOS capacitor using the MOSCAP tool. Several powerful analytic features of this tool are demonstrated.
PN Junction Lab Demonstration: Asymmetric PN Junctions
This video shows the simulation and analysis of a several PN junctions using PN Junction Lab, which is powered by PADRE. Several powerful analytic features of this tool are demonstrated.
CAD of MEMS & NEMS: State of the Art & Future Challenges
out of 5 stars
24 Feb 2008 | | Contributor(s):: Andreas Cangellaris
Computer aided design environments are very mature and used extensively for the design of every integrated electronical component that is commercially available to all of us. This presentation reviews recent developments in taking that framework and making it pertinent to the design of systems...
13 May 2004 | | Contributor(s):: Steven Clark
Introduction to Schred
28 Jun 2007 | | Contributor(s):: James K Fodor, Jing Guo
This learning module introduces nanoHUB users to the Schred simulator. A brief introduction to Schred is presented, followed by voiced presentations featuring the simulator in action. Upon completion of this module, users should be able to use this simulator to gain valuable insight into the...
01 May 2007 | | Contributor(s):: Jeff Gray, Michael McLennan
Simulates 1D heterostructures, including solar cells
30 Apr 2007 | | Contributor(s):: Steven Clark
TSUPREM-4 is a computer program for simulating the processing steps used in the manufacture of silicon integrated circuits and discrete devices.
Illinois Tools: MOCA
28 Mar 2007 | | Contributor(s):: Mohamed Mohamed, Umberto Ravaioli, Nahil Sobh, derrick kearney, Kyeong-hyun Park
2D Full-band Monte Carlo (MOCA) Simulation for SOI-Based Device Structures
06 Feb 2007 | | Contributor(s):: wei zhao, yu cao
Predictive model files for future transistor technologies.
31 Oct 2006 | | Contributor(s):: , , Paul Dodd, M. A. Stettler, Xufeng Wang, Gerhard Klimeck
Improved program consists of DEMON and SDEMON
Process Lab: Defect-coupled diffusion
09 Oct 2006 | | Contributor(s):: Shuqing (Victor) Cao, yang liu, Peter Griffin
This tool simulates dopant diffusion coupled with point defects.
Process Lab: Concentration-Dependent Diffusion
This modules simulates both the standard diffusion and concentration-dependent diffusion.
Integrated Circuit Fabrication Process Simulation
Process Lab: Oxidation Flux
This module simulates the oxidation flux.
Modeling Interface-defect Generation (MIG)
18 Jul 2006 | | Contributor(s):: Ahmad Ehteshamul Islam, HALDUN KUFLUOGLU, Muhammad A. Alam
Analyzes device reliability based on NBTI
Modeling Single and Dual-Gate Capacitors using SCHRED
31 Mar 2006 | | Contributor(s):: Dragica Vasileska
SCHRED stands for self-consistent solver of the 1D Poisson and 1D effective mass Schrodinger equation as applied to modeling single gate or dual-gate capacitors. The program incorporates many features such as choice of degenerate and non-degenerate statistics for semiclassical charge description,...