Tags: mobility

Resources (1-16 of 16)

  1. ab initio Model for Mobility and Seebeck coefficient using Boltzmann Transport (aMoBT) equation

    11 Jun 2015 | Contributor(s):: Alireza Faghaninia, Joel Ager (editor), Cynthia S Lo (editor)

    ab initio electronic transport model to calculate low-field electrical mobility and Seebeck coefficient of semiconductors in Boltzmann transport framework.

  2. CNT Mobility

    26 Apr 2009 | | Contributor(s):: Yang Zhao, Albert Liao, Eric Pop

    Simulate field effect carrier mobility in back-gated CNTFET devices at low field

  3. Conductivity - Theoretical Exercise

    02 Aug 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck


  4. ECE 606 Lecture 11: Interface States Recombination/Carrier Transport

    27 Sep 2012 | | Contributor(s):: Gerhard Klimeck

  5. ECE 606 Lecture 16: Carrier Transport

    23 Feb 2009 | | Contributor(s):: Muhammad A. Alam

  6. ECE 656 Lecture 26: Mobility in 3D, 2D, and 1D

    13 Nov 2009 | | Contributor(s):: Mark Lundstrom

    The goal in this lecture is to examine one scattering mechanism (ADP scattering) in 3D, 2D, and 1D to see how the scattering rate changes with dimensionality. Then we’ll compare mobilities in 3D, 2D, and 1D.Outline:Review of ADP Scattering in 3DADP Scattering in 2D: MCAADP Scattering in 2D:...

  7. ECE 656 Lecture 28: Balance Equation Approach I

    13 Nov 2009 | | Contributor(s):: Mark Lundstrom

    Outline:IntroductionGeneral continuity equationCarrier continuity equationCurrent equationSummary

  8. ECE 656 Lecture 30: Balance Equation Approach I

    09 Feb 2012 | | Contributor(s):: Mark Lundstrom

    This lecture should be viewed in the 2009 teaching ECE 656 Lecture 28: Balance Equation Approach I

  9. ECE 659 Lecture 3: Mobility

    21 Jan 2009 | | Contributor(s):: Supriyo Datta

  10. Ensemble Monte Carlo Method Described

    27 Apr 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck, Mark Lundstrom, David K. Ferry

    In this presentation we give an overview of the implementation details of the Ensemble Monte Carlo method for mobility and drift velocity calculation in arbitrary materials and arbitrary crystalographic orientations.NSF-Career, ONR

  11. Explanation of Rode's Iterative Procedure

    20 Jul 2010 | | Contributor(s):: David K. Ferry, Dragica Vasileska

    This set of slides describes the Rode's iterative procedure for the mobility calculation when the scattering mechanisms are neither elastic nor isotropic such as is polar optical phonon scattering.

  12. Illinois ECE 440: Introduction to Carrier Drift and Mobility Homework

    27 Jan 2010 | | Contributor(s):: Mohamed Mohamed

    This homework covers Carrier Transport in Semiconductors subjected to an electric field.

  13. Illinois Tools: Basic Bulk Silicon Transport Data at 300K

    27 Oct 2009 | | Contributor(s):: Kyeong-hyun Park, Mohamed Mohamed, Nahil Sobh, Fawad Hassan

    Calculations of doped bulk silicon transport data (new version release)

  14. Manual for the Generalized Bulk Monte Carlo Tool

    23 Jun 2011 | | Contributor(s):: Raghuraj Hathwar, Dragica Vasileska

    This manual describes the physics implemented behind the generalized bulk Monte Carlo tool.

  15. Mobility and Resistivity Tool

    15 Jun 2012 | | Contributor(s):: Ivan Santos, Stephanie Michelle Sanchez, Stella Quinones

    Understand how doping affects mobility and resistivity.

  16. Notes on Scattering and Mobility in 1D, 2D, and 3D

    03 Nov 2009 | | Contributor(s):: Dmitri Nikonov, Md. Sayed Hasan, George Bourianoff

    Derivation of the phonon-limited mobility is reviewed for electrons in bulk (3D) orquantum confined (2D and 1D) semiconductor structures. Analytical estimates are madethat show the mobility in quantum confined structures is, in general, lower or no higherthan in non-confined ones.