
how to calculate electron mobility
Open  Responses: 1
Can any one tell me how to find mobility if only hole or electron concentrations are known??
http://nanohub.org/answers/question/47

to find mobility
Open  Responses: 1
Can any one tell me how to find mobility if only hole or electron concentrations are known??
http://nanohub.org/answers/question/46

ab initio Model for Mobility and Seebeck coefficient using Boltzmann Transport (aMoBT) equation
11 Jun 2015  Contributor(s):: Alireza Faghaninia, Joel Ager (editor), Cynthia S Lo (editor)
ab initio electronic transport model to calculate lowfield electrical mobility and Seebeck coefficient of semiconductors in Boltzmann transport framework.

CNT Mobility
26 Apr 2009   Contributor(s):: Yang Zhao, Albert Liao, Eric Pop
Simulate field effect carrier mobility in backgated CNTFET devices at low field

Conductivity  Theoretical Exercise
02 Aug 2008   Contributor(s):: Dragica Vasileska, Gerhard Klimeck
www.eas.asu.edu/~vasileskNSF

DriftDiffusion Lab Learning Materials
By completing the DriftDiffusion Lab in ABACUS  Assembly of Basic Applications for Coordinated Understanding of Semiconductors, users will be able to: a) understand the phenomenon of drift and...
http://nanohub.org/wiki/DriftDiffusionPage

ECE 606 Lecture 11: Interface States Recombination/Carrier Transport
27 Sep 2012   Contributor(s):: Gerhard Klimeck

ECE 606 Lecture 16: Carrier Transport
23 Feb 2009   Contributor(s):: Muhammad A. Alam

ECE 656 Lecture 26: Mobility in 3D, 2D, and 1D
13 Nov 2009   Contributor(s):: Mark Lundstrom
The goal in this lecture is to examine one scattering mechanism (ADP scattering) in 3D, 2D, and 1D to see how the scattering rate changes with dimensionality. Then we’ll compare mobilities in 3D, 2D, and 1D.Outline:Review of ADP Scattering in 3DADP Scattering in 2D: MCAADP Scattering in 2D:...

ECE 656 Lecture 28: Balance Equation Approach I
13 Nov 2009   Contributor(s):: Mark Lundstrom
Outline:IntroductionGeneral continuity equationCarrier continuity equationCurrent equationSummary

ECE 656 Lecture 30: Balance Equation Approach I
09 Feb 2012   Contributor(s):: Mark Lundstrom
This lecture should be viewed in the 2009 teaching ECE 656 Lecture 28: Balance Equation Approach I

ECE 659 Lecture 3: Mobility
21 Jan 2009   Contributor(s):: Supriyo Datta

Ensemble Monte Carlo Method Described
27 Apr 2008   Contributor(s):: Dragica Vasileska, Gerhard Klimeck, Mark Lundstrom, David K. Ferry
In this presentation we give an overview of the implementation details of the Ensemble Monte Carlo method for mobility and drift velocity calculation in arbitrary materials and arbitrary crystalographic orientations.NSFCareer, ONR

Explanation of Rode's Iterative Procedure
20 Jul 2010   Contributor(s):: David K. Ferry, Dragica Vasileska
This set of slides describes the Rode's iterative procedure for the mobility calculation when the scattering mechanisms are neither elastic nor isotropic such as is polar optical phonon scattering.

Illinois ECE 440: Introduction to Carrier Drift and Mobility Homework
27 Jan 2010   Contributor(s):: Mohamed Mohamed
This homework covers Carrier Transport in Semiconductors subjected to an electric field.

Illinois Tools: Basic Bulk Silicon Transport Data at 300K
27 Oct 2009   Contributor(s):: Kyeonghyun Park, Mohamed Mohamed, Nahil Sobh, Fawad Hassan
Calculations of doped bulk silicon transport data (new version release)

Manual for the Generalized Bulk Monte Carlo Tool
23 Jun 2011   Contributor(s):: Raghuraj Hathwar, Dragica Vasileska
This manual describes the physics implemented behind the generalized bulk Monte Carlo tool.

Mobility and Resistivity Tool
15 Jun 2012   Contributor(s):: Ivan Santos, Stephanie Michelle Sanchez, Stella Quinones
Understand how doping affects mobility and resistivity.

MOSFet Learning Materials
By completing the MOSFET Lab in ABACUS  Assembly of Basic Applications for Coordinated Understanding of Semiconductors, users will be able to understand a) the operation of MOSFET devices, b)...
http://nanohub.org/wiki/MOSFETLabPage

Notes on Scattering and Mobility in 1D, 2D, and 3D
03 Nov 2009   Contributor(s):: Dmitri Nikonov, Md. Sayed Hasan, George Bourianoff
Derivation of the phononlimited mobility is reviewed for electrons in bulk (3D) orquantum confined (2D and 1D) semiconductor structures. Analytical estimates are madethat show the mobility in quantum confined structures is, in general, lower or no higherthan in nonconfined ones.