Sheng Ying Yue
Device Physics Studies of III-V and Silicon MOSFETS for Digital Logic
28 Jun 2013 | | Contributor(s):: Himadri Pal
III-V's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before III-V's can replace silicon (Si) in extremely scaled devices. The effect of low density-of-states of III-V materials...
Physics and Simulation of Nanoscale Electronic and Thermoelectric Devices
28 Jun 2013 | | Contributor(s):: raseong kim
For the past few decades, transistors have been continuously scaled. Dimensions are now at the nanoscale, and device performance has dramatically improved. Nanotechnology is also achieving breakthroughs in thermoelectrics, which have suffered from low efficiencies for decades. As the device scale...
Physics and Simulation of Quasi-Ballistic Transport in Nanoscale Transistors
28 Jun 2013 | | Contributor(s):: Jung-Hoon Rhew
The formidable progress in microelectronics in the last decade has pushed thechannel length of MOSFETs into decanano scale and the speed of BJTs into hundreds of gigahertz. This progress imposes new challenges on device simulation as the essential physics of carrier transport departs that of...
Jul 23 2012
Illinois 2012: Summer School on Computational Materials Science Quantum Monte Carlo: Theory and Fundamentals
Manual for Archimedes, the GNU Monte Carlo simulator
25 Jun 2012 | | Contributor(s):: Jean Michel D Sellier
Please, feel free to download the manual of Archimedes.Archimedes is the GNU package for semiconductor device simulations that has been released for the first time on 2005 under GPL. It has been created by Jean Michel D. Sellier who is, since then, the leader of the project and the main...
ECE 656 Lecture 34a: Monte Carlo Simulation I
21 Feb 2012 | | Contributor(s):: Mark Lundstrom
OutlineIntroductionReview of carrier scatteringSimulating carrier trajectoriesFree flightCollisionUpdate after collisionPutting it all togetherSummary
ECE 656 Lecture 34b: Monte Carlo Simulation II
ECE 656 Lecture 32: Balance Equation Approach III
19 Jan 2012 | | Contributor(s):: Mark Lundstrom
Outline:Review of L31Carrier temperature and heat fluxHeterostructuresSummary
Mesoscopic Simulations of Nitromethane
22 Sep 2011 | | Contributor(s):: Jean-Bernard Maillet
We present recent developments on the dissipative particle model that allow simulating the physico-chemical behavior of a molecular material at the mesoscale level. Several ingredients have been added to the previous model, in particular concerning the intermolecular force field and the...
Discussion about Ion Channels Using Reduced Model Approaches
21 Sep 2011 | | Contributor(s):: James Fonseca
The seminar will cover the reasons how the channels are able to selectively permit the flow of certain species of ions while blocking other physiological cations.
Bulk Monte Carlo: Implementation Details and Source Codes Download
01 Jun 2010 | | Contributor(s):: Dragica Vasileska, Stephen M. Goodnick
The Ensemble Monte Carlo technique has been used now for over 30 years as a numerical method to simulate nonequilibrium transport in semiconductor materials and devices, and has been the subject of numerous books and reviews. In application to transport problems, a random walk is generated to...
Lecture 7: Initialization and Equilibrium
05 Jan 2010 | | Contributor(s):: Ashlie Martini
Topics:Initial positionsInitial velocitiesEvaluating equilibrium
ECE 656 Lecture 31: Monte Carlo Simulation
01 Dec 2009 | | Contributor(s):: Mark Lundstrom
Outline:IntroductionReview of carrier scatteringSimulating carrier trajectoriesFree flightCollisionUpdate after collisionPutting it all togetherSummary
ECE 656 Lecture 30: Balance Equation Approach III
OutlineCarrier Temperature and Heat FluxBalance equations in 3DHeterostructuresSummary