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Illinois ECE 440 Solid State Electronic Devices, Lecture 33: MOS Capacitance
02 Mar 2010 | Online Presentations | Contributor(s): Eric Pop
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http://nanohub.org/resources/8570
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Illinois ECE 440 Solid State Electronic Devices, Lecture 32: MOS Threshold Voltage
02 Mar 2010 | Online Presentations | Contributor(s): Eric Pop
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http://nanohub.org/resources/8573
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Illinois ECE 440 Solid State Electronic Devices, Lecture 31: MOS Capacitor
02 Mar 2010 | Online Presentations | Contributor(s): Eric Pop
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http://nanohub.org/resources/8576
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Illinois ECE 440 Solid State Electronic Devices, Lecture 30: Intro MOS Transistor
02 Mar 2010 | Online Presentations | Contributor(s): Eric Pop
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http://nanohub.org/resources/8579
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ECE 606 Lecture 33: MOS Electrostatics II
16 Apr 2009 | Online Presentations | Contributor(s): Muhammad Alam
http://nanohub.org/resources/5896
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ECE 606 Lecture 34: MOSCAP Frequency Response
16 Apr 2009 | Online Presentations | Contributor(s): Muhammad Alam
http://nanohub.org/resources/5898
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ECE 606 Lecture 32: MOS Electrostatics I
19 Nov 2008 | Online Presentations | Contributor(s): Muhammad Alam
http://nanohub.org/resources/5894
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ECE 606 Lecture 26: Shottky Diode II
19 Nov 2008 | Online Presentations | Contributor(s): Muhammad Alam
http://nanohub.org/resources/5830
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Quantum and Thermal Effects in Nanoscale Devices
18 Sep 2008 | Online Presentations | Contributor(s): Dragica Vasileska
To investigate lattice heating within a Monte Carlo device simulation framework, we simultaneously solve the Boltzmann transport equation for the electrons, the 2D Poisson equation to get the …
http://nanohub.org/resources/5448
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ECE 612 Lecture 3: MOS Capacitors
09 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Outline: 1) Short review, 2) Gate voltage / surface potential relation, 3) The flatbandvoltage, 4) MOS capacitance vs. voltage, 5) Gate voltage and inversion layer charge.
http://nanohub.org/resources/5363
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New Dimension in Performance: Harnessing 3D Integration Technology
29 Nov 2007 | Online Presentations | Contributor(s): Kerry Bernstein
Despite generation on generation of scaling, computer chips have remained essentially 2-dimensional. Improvements in on-chip wire delay, and in the total number of inputs and outputs has not been …
http://nanohub.org/resources/3596
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CMOS Nanotechnology
07 Jul 2004 | Online Presentations | Contributor(s): Mark Lundstrom
In non-specialist language, this talk introduces CMOS technology used for modern electronics. Beginning with an explanation of "CMOS," the speaker relates basic system considerations of transistor …
http://nanohub.org/resources/166
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Digital Electronics: Fundamental Limits and Future Prospects
20 Jan 2004 | Online Presentations | Contributor(s): Konstantin K. Likharev
I will review some old and some recent work on the fundamental (and not so fundamental) limits imposed by physics of electron devices on their density and power consumption.
http://nanohub.org/resources/149
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Nanoelectronic Scaling Tradeoffs: What does Physics Have to Say?
23 Sep 2003 | Online Presentations | Contributor(s): Victor Zhirnov
Beyond CMOS, several completely new approaches to information-processing and data-storage technologies and architectures are emerging to address the timeframe beyond the current SIA International …
http://nanohub.org/resources/146