
ECE 695A Lecture 13R: Review Questions
19 Feb 2013   Contributor(s):: Muhammad Alam
Review Questions:Both SiH and SiO are involved in HCI degradation. Give two evidences.Why doesn’t HCI occur during NBTI stress condition?I suggested that HCI curve can shifted horizontally to form a universal curve, do you believe that I can do a corresponding vertical shift to form the universal...

ECE 606 Lecture 21: MOS Electrostatics
26 Nov 2012   Contributor(s):: Gerhard Klimeck

ECE 606 Lecture 22: MOScap Frequence Response/MOSFET IV Characteristics
26 Nov 2012   Contributor(s):: Gerhard Klimeck

Uniform Methodology of Benchmarking BeyondCMOS Devices
31 Oct 2012   Contributor(s):: Dmitri Nikonov
Multiple logic devices are presently under study within the Nanoelectronic Research Initiative (NRI) to carry the development of integrated circuits beyond the CMOS roadmap. Structure and operational principles of these devices are described.Theories used for benchmarking these devices are...

Nanoscale Transistors Lecture 4: MOS Electrostatics
19 Jul 2012   Contributor(s):: Mark Lundstrom

Illinois ECE 440 Solid State Electronic Devices, Lecture 33: MOS Capacitance
02 Mar 2010   Contributor(s):: Eric Pop
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Illinois ECE 440 Solid State Electronic Devices, Lecture 32: MOS Threshold Voltage
02 Mar 2010   Contributor(s):: Eric Pop
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Illinois ECE 440 Solid State Electronic Devices, Lecture 31: MOS Capacitor
02 Mar 2010   Contributor(s):: Eric Pop
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Illinois ECE 440 Solid State Electronic Devices, Lecture 30: Intro MOS Transistor
02 Mar 2010   Contributor(s):: Eric Pop
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ECE 606 Lecture 33: MOS Electrostatics II
16 Apr 2009   Contributor(s):: Muhammad A. Alam

ECE 606 Lecture 34: MOSCAP Frequency Response
16 Apr 2009   Contributor(s):: Muhammad A. Alam

ECE 606 Lecture 32: MOS Electrostatics I
19 Nov 2008   Contributor(s):: Muhammad A. Alam

ECE 606 Lecture 26: Schottky Diode II
19 Nov 2008   Contributor(s):: Muhammad A. Alam

Quantum and Thermal Effects in Nanoscale Devices
18 Sep 2008   Contributor(s):: Dragica Vasileska
To investigate lattice heating within a Monte Carlo device simulation framework, we simultaneously solve the Boltzmann transport equation for the electrons, the 2D Poisson equation to get the selfconsistent fields and the hydrodynamic equations for acoustic and optical phonons. The phonon...

ECE 612 Lecture 3: MOS Capacitors
09 Sep 2008   Contributor(s):: Mark Lundstrom
Outline: 1) Short review,2) Gate voltage / surface potential relation,3) The flatbandvoltage,4) MOS capacitance vs. voltage, 5) Gate voltage and inversion layer charge.

New Dimension in Performance: Harnessing 3D Integration Technology
29 Nov 2007   Contributor(s):: Kerry Bernstein
Despite generation on generation of scaling, computer chips have remained essentially 2dimensional. Improvements in onchip wire delay, and in the total number of inputs and outputs has not been able to keep up with improvements to the transistor, and its getting harder and harder to hide it! 3D...

CMOS Nanotechnology
07 Jul 2004   Contributor(s):: Mark Lundstrom
In nonspecialist language, this talk introduces CMOS technology used for modern electronics. Beginning with an explanation of "CMOS," the speaker relates basic system considerations of transistor design and identifies future challenges for CMOS electronics. Anyone with an elementary...

Digital Electronics: Fundamental Limits and Future Prospects
20 Jan 2004   Contributor(s):: Konstantin K. Likharev
I will review some old and some recent work on the fundamental (and not so fundamental) limits imposed by physics of electron devices on their density and power consumption.