CMOS Nanotechnology

07 Jul 2004 | Online Presentations | Contributor(s): Mark Lundstrom

In non-specialist language, this talk introduces CMOS technology used for modern electronics. Beginning with an explanation of "CMOS," the speaker relates basic system considerations of transistor …

https://nanohub.org/resources/166

Digital Electronics: Fundamental Limits and Future Prospects

20 Jan 2004 | Online Presentations | Contributor(s): Konstantin K. Likharev

I will review some old and some recent work on the fundamental (and not so fundamental) limits imposed by physics of electron devices on their density and power consumption.

https://nanohub.org/resources/149

ECE 606 Lecture 21: MOS Electrostatics

26 Nov 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

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https://nanohub.org/resources/15976

ECE 606 Lecture 22: MOScap Frequence Response/MOSFET I-V Characteristics

26 Nov 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

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https://nanohub.org/resources/15977

ECE 606 Lecture 26: Schottky Diode II

19 Nov 2008 | Online Presentations | Contributor(s): Muhammad A. Alam

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https://nanohub.org/resources/5830

ECE 606 Lecture 32: MOS Electrostatics I

19 Nov 2008 | Online Presentations | Contributor(s): Muhammad A. Alam

https://nanohub.org/resources/5894

ECE 606 Lecture 33: MOS Electrostatics II

16 Apr 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

https://nanohub.org/resources/5896

ECE 606 Lecture 34: MOSCAP Frequency Response

16 Apr 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

https://nanohub.org/resources/5898

ECE 612 Lecture 3: MOS Capacitors

09 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

Outline: 1) Short review, 2) Gate voltage / surface potential relation, 3) The flatbandvoltage, 4) MOS capacitance vs. voltage, 5) Gate voltage and inversion layer charge.

https://nanohub.org/resources/5363

ECE 695A Lecture 13R: Review Questions

19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

Review Questions: Both SiH and SiO are involved in HCI degradation. Give two evidences. Why doesn’t HCI occur during NBTI stress condition? I suggested that HCI curve can shifted …

https://nanohub.org/resources/16888

Illinois ECE 440 Solid State Electronic Devices, Lecture 30: Intro MOS Transistor

02 Mar 2010 | Online Presentations | Contributor(s): Eric Pop

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https://nanohub.org/resources/8579

Illinois ECE 440 Solid State Electronic Devices, Lecture 31: MOS Capacitor

02 Mar 2010 | Online Presentations | Contributor(s): Eric Pop

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https://nanohub.org/resources/8576

Illinois ECE 440 Solid State Electronic Devices, Lecture 32: MOS Threshold Voltage

02 Mar 2010 | Online Presentations | Contributor(s): Eric Pop

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https://nanohub.org/resources/8573

Illinois ECE 440 Solid State Electronic Devices, Lecture 33: MOS Capacitance

02 Mar 2010 | Online Presentations | Contributor(s): Eric Pop

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https://nanohub.org/resources/8570

Nanoelectronic Scaling Tradeoffs: What does Physics Have to Say?

23 Sep 2003 | Online Presentations | Contributor(s): Victor Zhirnov

Beyond CMOS, several completely new approaches to information-processing and data-storage technologies and architectures are emerging to address the timeframe beyond the current SIA International …

https://nanohub.org/resources/146

Nanoscale Transistors Lecture 4: MOS Electrostatics

19 Jul 2012 | Online Presentations | Contributor(s): Mark Lundstrom

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https://nanohub.org/resources/14763

New Dimension in Performance: Harnessing 3D Integration Technology

29 Nov 2007 | Online Presentations | Contributor(s): Kerry Bernstein

Despite generation on generation of scaling, computer chips have remained essentially 2-dimensional. Improvements in on-chip wire delay, and in the total number of inputs and outputs has not been …

https://nanohub.org/resources/3596

Quantum and Thermal Effects in Nanoscale Devices

18 Sep 2008 | Online Presentations | Contributor(s): Dragica Vasileska

To investigate lattice heating within a Monte Carlo device simulation framework, we simultaneously solve the Boltzmann transport equation for the electrons, the 2D Poisson equation to get the …

https://nanohub.org/resources/5448

Uniform Methodology of Benchmarking Beyond-CMOS Devices

31 Oct 2012 | Online Presentations | Contributor(s): Dmitri Nikonov

Multiple logic devices are presently under study within the Nanoelectronic Research Initiative (NRI) to carry the development of integrated circuits beyond the CMOS roadmap. Structure and operational …

https://nanohub.org/resources/15674