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Tags: MOS

Resources (1-20 of 38)

  1. CMOS Nanotechnology

    07 Jul 2004 | Online Presentations | Contributor(s): Mark Lundstrom

    In non-specialist language, this talk introduces CMOS technology used for modern electronics. Beginning with an explanation of "CMOS," the speaker relates basic system considerations of transistor...

    http://nanohub.org/resources/166

  2. Digital Electronics: Fundamental Limits and Future Prospects

    20 Jan 2004 | Online Presentations | Contributor(s): Konstantin K. Likharev

    I will review some old and some recent work on the fundamental (and not so fundamental) limits imposed by physics of electron devices on their density and power consumption.

    http://nanohub.org/resources/149

  3. ECE 606 Lecture 21: MOS Electrostatics

    26 Nov 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

    http://nanohub.org/resources/15976

  4. ECE 606 Lecture 22: MOScap Frequence Response/MOSFET I-V Characteristics

    26 Nov 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

    http://nanohub.org/resources/15977

  5. ECE 606 Lecture 26: Schottky Diode II

    19 Nov 2008 | Online Presentations | Contributor(s): Muhammad A. Alam

    http://nanohub.org/resources/5830

  6. ECE 606 Lecture 32: MOS Electrostatics I

    19 Nov 2008 | Online Presentations | Contributor(s): Muhammad A. Alam

    http://nanohub.org/resources/5894

  7. ECE 606 Lecture 33: MOS Electrostatics II

    16 Apr 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    http://nanohub.org/resources/5896

  8. ECE 606 Lecture 34: MOSCAP Frequency Response

    16 Apr 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    http://nanohub.org/resources/5898

  9. ECE 612 Lecture 3: MOS Capacitors

    09 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) Short review, 2) Gate voltage / surface potential relation, 3) The flatbandvoltage, 4) MOS capacitance vs. voltage, 5) Gate voltage and inversion layer charge.

    http://nanohub.org/resources/5363

  10. ECE 695A Lecture 13R: Review Questions

    19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review Questions: Both SiH and SiO are involved in HCI degradation. Give two evidences. Why doesn’t HCI occur during NBTI stress condition? I suggested that HCI curve can shifted...

    http://nanohub.org/resources/16888

  11. Illinois ECE 440 Solid State Electronic Devices, Lecture 30: Intro MOS Transistor

    02 Mar 2010 | Online Presentations | Contributor(s): Eric Pop

    http://nanohub.org/resources/8579

  12. Illinois ECE 440 Solid State Electronic Devices, Lecture 31: MOS Capacitor

    02 Mar 2010 | Online Presentations | Contributor(s): Eric Pop

    http://nanohub.org/resources/8576

  13. Illinois ECE 440 Solid State Electronic Devices, Lecture 32: MOS Threshold Voltage

    02 Mar 2010 | Online Presentations | Contributor(s): Eric Pop

    http://nanohub.org/resources/8573

  14. Illinois ECE 440 Solid State Electronic Devices, Lecture 33: MOS Capacitance

    02 Mar 2010 | Online Presentations | Contributor(s): Eric Pop

    http://nanohub.org/resources/8570

  15. Nanoscale Transistors Lecture 4: MOS Electrostatics

    19 Jul 2012 | Online Presentations | Contributor(s): Mark Lundstrom

    http://nanohub.org/resources/14763

  16. New Dimension in Performance: Harnessing 3D Integration Technology

    29 Nov 2007 | Online Presentations | Contributor(s): Kerry Bernstein

    Despite generation on generation of scaling, computer chips have remained essentially 2-dimensional. Improvements in on-chip wire delay, and in the total number of inputs and outputs has not been...

    http://nanohub.org/resources/3596

  17. Quantum and Thermal Effects in Nanoscale Devices

    18 Sep 2008 | Online Presentations | Contributor(s): Dragica Vasileska

    To investigate lattice heating within a Monte Carlo device simulation framework, we simultaneously solve the Boltzmann transport equation for the electrons, the 2D Poisson equation to get the...

    http://nanohub.org/resources/5448

  18. Uniform Methodology of Benchmarking Beyond-CMOS Devices

    31 Oct 2012 | Online Presentations | Contributor(s): Dmitri Nikonov

    Multiple logic devices are presently under study within the Nanoelectronic Research Initiative (NRI) to carry the development of integrated circuits beyond the CMOS roadmap. Structure and...

    http://nanohub.org/resources/15674

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