
ECE 695A Lecture 13R: Review Questions
19 Feb 2013   Contributor(s):: Muhammad Alam
Review Questions:Both SiH and SiO are involved in HCI degradation. Give two evidences.Why doesn’t HCI occur during NBTI stress condition?I suggested that HCI curve can shifted horizontally to form a universal curve, do you believe that I can do a corresponding vertical shift to form the...

ECE 606 Lecture 21: MOS Electrostatics
26 Nov 2012   Contributor(s):: Gerhard Klimeck

ECE 606 Lecture 22: MOScap Frequence Response/MOSFET IV Characteristics
26 Nov 2012   Contributor(s):: Gerhard Klimeck

Uniform Methodology of Benchmarking BeyondCMOS Devices
31 Oct 2012   Contributor(s):: Dmitri Nikonov
Multiple logic devices are presently under study within the Nanoelectronic Research Initiative (NRI) to carry the development of integrated circuits beyond the CMOS roadmap. Structure and operational principles of these devices are described.Theories used for benchmarking these devices are...

Nanoscale Transistors Lecture 4: MOS Electrostatics
19 Jul 2012   Contributor(s):: Mark Lundstrom

OMEN Nanowire: solve the challenge
05 Feb 2011   Contributor(s):: SungGeun Kim
This document includes a challenging problems for OMEN Nanowire users. It challenges users to establish a nanowire transistor structure such that it satisfy the ITRS 2010 requirements.

Analytical and Numerical Solution of the Double Barrier Problem
28 Jun 2010   Contributor(s):: Gerhard Klimeck, Parijat Sengupta, Dragica Vasileska
Tunneling is fully quantummechanical effect that does not have classical analog. Tunneling has revolutionized surface science by its utilization in scanning tunneling microscopes. In some device applications tunneling is required for the operation of the device (Resonant tunneling diodes,...

Illinois ECE 440 Solid State Electronic Devices, Lecture 33: MOS Capacitance
02 Mar 2010   Contributor(s):: Eric Pop
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Illinois ECE 440 Solid State Electronic Devices, Lecture 32: MOS Threshold Voltage
02 Mar 2010   Contributor(s):: Eric Pop
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Illinois ECE 440 Solid State Electronic Devices, Lecture 31: MOS Capacitor
02 Mar 2010   Contributor(s):: Eric Pop
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Illinois ECE 440 Solid State Electronic Devices, Lecture 30: Intro MOS Transistor
02 Mar 2010   Contributor(s):: Eric Pop
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Illinois ECE 440: MOS FieldEffect Transistor Homework
28 Jan 2010   Contributor(s):: Mohamed Mohamed
This homework covers Output Characteristics and Mobility Model of MOSFETs.

Band Structure Lab Demonstration: Bulk Strain
12 Jun 2009   Contributor(s):: Gerhard Klimeck
This video shows an electronic structure calculation of bulk Si using Band Structure Lab. Several powerful features of this tool are demonstrated.

MOSCap Demonstration: MOS Capacitor Simulation
11 Jun 2009   Contributor(s):: Gerhard Klimeck, Benjamin P Haley
This video shows the simulation of a MOS capacitor using the MOSCAP tool. Several powerful analytic features of this tool are demonstrated.

ECE 606 Lecture 33: MOS Electrostatics II
16 Apr 2009   Contributor(s):: Muhammad A. Alam

ECE 606 Lecture 34: MOSCAP Frequency Response
16 Apr 2009   Contributor(s):: Muhammad A. Alam

MOSCap: FirstTime User Guide
30 Mar 2009   Contributor(s):: SungGeun Kim, Benjamin P Haley, Gerhard Klimeck
This firsttime user guide provides an introduction to MOSCap. The MOSCap tool simulates the onedimensional (along the growth direction) electrostatics in typical single and dualgate MetalOxideSemiconductor device structures as a function of device size, geometry, oxide charge, temperature,...

ECE 606 Lecture 32: MOS Electrostatics I
19 Nov 2008   Contributor(s):: Muhammad A. Alam

ECE 606 Lecture 26: Schottky Diode II
19 Nov 2008   Contributor(s):: Muhammad A. Alam

Quantum and Thermal Effects in Nanoscale Devices
18 Sep 2008   Contributor(s):: Dragica Vasileska
To investigate lattice heating within a Monte Carlo device simulation framework, we simultaneously solve the Boltzmann transport equation for the electrons, the 2D Poisson equation to get the selfconsistent fields and the hydrodynamic equations for acoustic and optical phonons. The phonon...