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ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors
16 Jul 2008 | | Contributor(s):: Xufeng Wang, Dragica Vasileska, Gerhard Klimeck
One-stop-shop for teaching semiconductor device education
Analytical and Numerical Solution of the Double Barrier Problem
28 Jun 2010 | | Contributor(s):: Gerhard Klimeck, Parijat Sengupta, Dragica Vasileska
Tunneling is fully quantum-mechanical effect that does not have classical analog. Tunneling has revolutionized surface science by its utilization in scanning tunneling microscopes. In some device applications tunneling is required for the operation of the device (Resonant tunneling diodes,...
Band Structure Lab Demonstration: Bulk Strain
03 Jun 2009 | | Contributor(s):: Gerhard Klimeck
This video shows an electronic structure calculation of bulk Si using Band Structure Lab. Several powerful features of this tool are demonstrated.
15 Jun 2006 | | Contributor(s):: Gang Li, yang xu, Narayan Aluru
Compute the charge density distribution and potential variation inside a MOS structure by using a coarse-grained tight binding model
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07 Jul 2004 | | Contributor(s):: Mark Lundstrom
In non-specialist language, this talk introduces CMOS technology used for modern electronics. Beginning with an explanation of "CMOS," the speaker relates basic system considerations of transistor design and identifies future challenges for CMOS electronics. Anyone with an elementary...
Digital Electronics: Fundamental Limits and Future Prospects
20 Jan 2004 |
I will review some old and some recent work on the fundamental (and not so fundamental) limits imposed by physics of electron devices on their density and power consumption.
ECE 606 Lecture 21: MOS Electrostatics
26 Nov 2012 | | Contributor(s):: Gerhard Klimeck
ECE 606 Lecture 22: MOScap Frequence Response/MOSFET I-V Characteristics
ECE 606 Lecture 26: Schottky Diode II
19 Nov 2008 | | Contributor(s):: Muhammad A. Alam
ECE 606 Lecture 32: MOS Electrostatics I
ECE 606 Lecture 33: MOS Electrostatics II
16 Apr 2009 | | Contributor(s):: Muhammad A. Alam
ECE 606 Lecture 34: MOSCAP Frequency Response
ECE 612 Lecture 3: MOS Capacitors
09 Sep 2008 | | Contributor(s):: Mark Lundstrom
Outline: 1) Short review,2) Gate voltage / surface potential relation,3) The flatbandvoltage,4) MOS capacitance vs. voltage, 5) Gate voltage and inversion layer charge.
ECE 695A Lecture 13R: Review Questions
19 Feb 2013 | | Contributor(s):: Muhammad Alam
Review Questions:Both SiH and SiO are involved in HCI degradation. Give two evidences.Why doesn’t HCI occur during NBTI stress condition?I suggested that HCI curve can shifted horizontally to form a universal curve, do you believe that I can do a corresponding vertical shift to form the...
Illinois ECE 440 Solid State Electronic Devices, Lecture 30: Intro MOS Transistor
02 Mar 2010 | | Contributor(s):: Eric Pop
Illinois ECE 440 Solid State Electronic Devices, Lecture 31: MOS Capacitor
Illinois ECE 440 Solid State Electronic Devices, Lecture 32: MOS Threshold Voltage
Illinois ECE 440 Solid State Electronic Devices, Lecture 33: MOS Capacitance
Illinois ECE 440: MOS Field-Effect Transistor Homework
28 Jan 2010 | | Contributor(s):: Mohamed Mohamed
This homework covers Output Characteristics and Mobility Model of MOSFETs.
Illinois Tools: MOCA
28 Mar 2007 | | Contributor(s):: Mohamed Mohamed, Umberto Ravaioli, Nahil Sobh, derrick kearney, Kyeong-hyun Park
2D Full-band Monte Carlo (MOCA) Simulation for SOI-Based Device Structures