All Categories (21-40 of 53)

1. Analytical and Numerical Solution of the Double Barrier Problem

   28 Jun 2010 | Contributor(s):: Gerhard Klimeck, Parijat Sengupta, Dragica Vasileska

   Tunneling is fully quantum-mechanical effect that does not have classical analog. Tunneling has revolutionized surface science by its utilization in scanning tunneling microscopes. In some device applications tunneling is required for the operation of the device (Resonant tunneling diodes,...

2. Illinois ECE 440 Solid State Electronic Devices, Lecture 30: Intro MOS Transistor

   02 Mar 2010 | | Contributor(s):: Eric Pop

   …

3. Illinois ECE 440 Solid State Electronic Devices, Lecture 31: MOS Capacitor

   02 Mar 2010 | | Contributor(s):: Eric Pop

4. Illinois ECE 440 Solid State Electronic Devices, Lecture 32: MOS Threshold Voltage

   02 Mar 2010 | | Contributor(s):: Eric Pop

5. Illinois ECE 440 Solid State Electronic Devices, Lecture 33: MOS Capacitance

   02 Mar 2010 | | Contributor(s):: Eric Pop

6. Illinois ECE 440: MOS Field-Effect Transistor Homework

   28 Jan 2010 | | Contributor(s):: Mohamed Mohamed

   This homework covers Output Characteristics and Mobility Model of MOSFETs.

7. Band Structure Lab Demonstration: Bulk Strain

   12 Jun 2009 | | Contributor(s):: Gerhard Klimeck

   This video shows an electronic structure calculation of bulk Si using Band Structure Lab. Several powerful features of this tool are demonstrated.

8. MOSCap Demonstration: MOS Capacitor Simulation

   11 Jun 2009 | | Contributor(s):: Gerhard Klimeck, Benjamin P Haley

   This video shows the simulation of a MOS capacitor using the MOSCAP tool. Several powerful analytic features of this tool are demonstrated.

9. ECE 606 Lecture 33: MOS Electrostatics II

   out of 5 stars 

   16 Apr 2009 | | Contributor(s):: Muhammad A. Alam

10. ECE 606 Lecture 34: MOSCAP Frequency Response

    out of 5 stars 

    16 Apr 2009 | | Contributor(s):: Muhammad A. Alam

11. MOSCap: First-Time User Guide

    out of 5 stars 

    30 Mar 2009 | | Contributor(s):: SungGeun Kim, Benjamin P Haley, Gerhard Klimeck

    This first-time user guide provides an introduction to MOSCap. The MOSCap tool simulates the one-dimensional (along the growth direction) electrostatics in typical single and dual-gate Metal-Oxide-Semiconductor device structures as a function of device size, geometry, oxide charge, temperature,...

12. ECE 606 Lecture 32: MOS Electrostatics I

    out of 5 stars 

    19 Nov 2008 | | Contributor(s):: Muhammad A. Alam

13. ECE 606 Lecture 26: Schottky Diode II

    out of 5 stars 

    19 Nov 2008 | | Contributor(s):: Muhammad A. Alam

14. Quantum and Thermal Effects in Nanoscale Devices

    out of 5 stars 

    18 Sep 2008 | | Contributor(s):: Dragica Vasileska

    To investigate lattice heating within a Monte Carlo device simulation framework, we simultaneously solve the Boltzmann transport equation for the electrons, the 2D Poisson equation to get the self-consistent fields and the hydrodynamic equations for acoustic and optical phonons. The phonon...

15. ECE 612 Lecture 3: MOS Capacitors

    out of 5 stars 

    09 Sep 2008 | | Contributor(s):: Mark Lundstrom

    Outline: 1) Short review,2) Gate voltage / surface potential relation,3) The flatbandvoltage,4) MOS capacitance vs. voltage, 5) Gate voltage and inversion layer charge.

16. ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors

    out of 5 stars 

    16 Jul 2008 | | Contributor(s):: Xufeng Wang, Daniel Mejia, Dragica Vasileska, Gerhard Klimeck

    One-stop-shop for teaching semiconductor devices

17. MOSFET Exercise

    out of 5 stars 

    07 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    With this exercise students are familiarized with the punchthrough effect, the series resistance at the source and drain region and the importance of impact ionization at high gate and drain bias conditions.www.eas.asu.edu/~vasileskNSF

18. MOSfet Homework Assignment - Role of Dielectric Constant and Thickness

    out of 5 stars 

    31 Jan 2008 | | Contributor(s):: David K. Ferry

    Use the MOSfet tool on nanoHUB to simulate a n-channel MOSFET with the following parameters:Lsd=LG=45nm (each 15 nodes), oxide thickness of 1.2 nm (K=3.9, 5 nodes),poly-Si gate, junction depth of 10 nm (20 nodes), and all other parametersat their nominal preset values.Now, change K to 20,...

19. Semiconductor Device Education Material

    out of 5 stars 

    28 Jan 2008 | | Contributor(s):: Gerhard Klimeck

    This page has moved to "a Wiki page format" When we hear the words, semiconductor device, we may think first of the transistors in PCs or video game consoles, but transistors are the basic component in all of the electronic devices we use in our daily lives. Electronic systems are...

20. Is there any free licence drift diffusion device simulator that supports MOS and bipolar devices

    Q&A|Open | Responses: 1

    A sequel to this question is : Is Bambi simulator still available ??

    https://nanohub.org/answers/question/39