
Quantum and Thermal Effects in Nanoscale Devices
18 Sep 2008  Online Presentations  Contributor(s): Dragica Vasileska
To investigate lattice heating within a Monte Carlo device simulation framework, we simultaneously solve the Boltzmann transport equation for the electrons, the 2D Poisson equation to get the...
http://nanohub.org/resources/5448

ECE 612 Lecture 3: MOS Capacitors
09 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline: 1) Short review,
2) Gate voltage / surface potential relation,
3) The flatbandvoltage,
4) MOS capacitance vs. voltage,
5) Gate voltage and inversion layer charge.
http://nanohub.org/resources/5363

ABACUS  Assembly of Basic Applications for Coordinated Understanding of Semiconductors
08 Aug 2008  Tools  Contributor(s): Xufeng Wang, Dragica Vasileska, Gerhard Klimeck
Onestopshop for teaching semiconductor device education
http://nanohub.org/resources/abacus

MOSFET Exercise
08 Jul 2008  Teaching Materials  Contributor(s): Dragica Vasileska, Gerhard Klimeck
With this exercise students are familiarized with the punchthrough effect, the series resistance at the source and drain region and the importance of impact ionization at high gate and drain bias...
http://nanohub.org/resources/4906

MOSfet Homework Assignment  Role of Dielectric Constant and Thickness
31 Jan 2008  Teaching Materials  Contributor(s): David K. Ferry
Use the MOSfet tool on nanoHUB to simulate a nchannel MOSFET with the following parameters:
Lsd=LG=45nm (each 15 nodes), oxide thickness of 1.2 nm (K=3.9, 5 nodes),
polySi gate, junction depth...
http://nanohub.org/resources/3948

Semiconductor Device Education Material
28 Jan 2008  Teaching Materials  Contributor(s): Gerhard Klimeck
This page has moved to "a Wiki page format"
When we hear the words, semiconductor device, we may think first of the transistors in PCs or video game consoles, but transistors are the basic...
http://nanohub.org/resources/edu_semi

Is there any free licence drift diffusion device simulator that supports MOS and bipolar devices
Open  Responses: 1
A sequel to this question is : Is Bambi simulator still available ??
http://nanohub.org/answers/question/39

New Dimension in Performance: Harnessing 3D Integration Technology
29 Nov 2007  Online Presentations  Contributor(s): Kerry Bernstein
Despite generation on generation of scaling, computer chips have remained essentially 2dimensional. Improvements in onchip wire delay, and in the total number of inputs and outputs has not been...
http://nanohub.org/resources/3596

Introduction to nanoMOS
02 Jul 2007  Series  Contributor(s): James K Fodor, Jing Guo
This learning module introduces nanoHUB users to the nanoMOS simulator. A brief introduction to nanoMOS is presented, followed by voiced presentations featuring the simulator in action. Upon...
http://nanohub.org/resources/2845

Illinois Tools: MOCA
28 Mar 2007  Tools  Contributor(s): Mohamed Mohamed, Umberto Ravaioli, Nahil Sobh, derrick kearney
A 2D Fullband Monte Carlo (MOCA) Simulation of SOI Device Structures
http://nanohub.org/resources/moca

CGTB
16 Jun 2006  Tools  Contributor(s): Gang Li, Yang Xu, Narayan Aluru
Compute the charge density distribution and potential variation inside a MOS structure by using a coarsegrained tight binding model
http://nanohub.org/resources/cgtb

MOSCap
06 Apr 2006  Tools  Contributor(s): Akira Matsudaira, Saumitra Raj Mehrotra, Shaikh S. Ahmed, Gerhard Klimeck, Dragica Vasileska
Capacitance of a MOS device
http://nanohub.org/resources/moscap

Modeling Single and DualGate Capacitors using SCHRED
31 Mar 2006  Series  Contributor(s): Dragica Vasileska
SCHRED stands for selfconsistent solver of the 1D Poisson and 1D effective mass Schrodinger equation as applied to modeling single gate or dualgate capacitors. The program incorporates many...
http://nanohub.org/resources/1148

Schred
09 Feb 2006  Tools  Contributor(s): Dragica Vasileska, Shaikh S. Ahmed, Gokula Kannan, Matteo Mannino, Gerhard Klimeck, Mark Lundstrom, Akira Matsudaira, Junzhe Geng
SCHRED simulation software calculates the envelope wavefunctions and the corresponding boundstate energies in a typical MOS, SOS and a typical SOI structure.
http://nanohub.org/resources/schred

New Frontiers in Nanocomputing
03 Nov 2005  Series
Welcome to Frontiers in Nanocomputing, a seminar series that focuses
on systems issues for nanoelectronics. Our topic was Fundamental
Limits of Digital Computation. The questions to each...
http://nanohub.org/resources/247

CMOS Nanotechnology
25 May 2005  Online Presentations  Contributor(s): Mark Lundstrom
In nonspecialist language, this talk introduces CMOS technology used for modern electronics. Beginning with an explanation of "CMOS," the speaker relates basic system considerations of transistor...
http://nanohub.org/resources/166

Schred Source Code Download
09 Mar 2005  Downloads  Contributor(s): Dragica Vasileska, Zhibin Ren
Schred 2.0 calculates the envelope wavefunctions and the corresponding boundstate energies in a typical MOS (MetalOxideSemiconductor) or SOS (SemiconductorOxide Semiconductor) structure and a...
http://nanohub.org/resources/106

Digital Electronics: Fundamental Limits and Future Prospects
13 Apr 2004  Online Presentations  Contributor(s): Konstantin K. Likharev
I will review some old and some recent work on the fundamental (and not so fundamental) limits imposed by physics of electron devices on their density and power consumption.
http://nanohub.org/resources/149

Nanoelectronic Scaling Tradeoffs: What does Physics Have to Say?
12 Apr 2004  Presentation Materials  Contributor(s): Victor Zhirnov
Beyond CMOS, several completely new approaches to informationprocessing and datastorage technologies and architectures are emerging to address the timeframe beyond the current SIA International...
http://nanohub.org/resources/146