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Tags: MOS

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  1. Quantum and Thermal Effects in Nanoscale Devices

    18 Sep 2008 | Online Presentations | Contributor(s): Dragica Vasileska

    To investigate lattice heating within a Monte Carlo device simulation framework, we simultaneously solve the Boltzmann transport equation for the electrons, the 2D Poisson equation to get the...

    http://nanohub.org/resources/5448

  2. ECE 612 Lecture 3: MOS Capacitors

    09 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) Short review, 2) Gate voltage / surface potential relation, 3) The flatbandvoltage, 4) MOS capacitance vs. voltage, 5) Gate voltage and inversion layer charge.

    http://nanohub.org/resources/5363

  3. ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors

    16 Jul 2008 | Tools | Contributor(s): Xufeng Wang, Dragica Vasileska, Gerhard Klimeck

    One-stop-shop for teaching semiconductor device education

    http://nanohub.org/resources/abacus

  4. MOSFET Exercise

    07 Jul 2008 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck

    With this exercise students are familiarized with the punchthrough effect, the series resistance at the source and drain region and the importance of impact ionization at high gate and drain bias...

    http://nanohub.org/resources/4906

  5. MOSfet Homework Assignment - Role of Dielectric Constant and Thickness

    31 Jan 2008 | Teaching Materials | Contributor(s): David K. Ferry

    Use the MOSfet tool on nanoHUB to simulate a n-channel MOSFET with the following parameters: Lsd=LG=45nm (each 15 nodes), oxide thickness of 1.2 nm (K=3.9, 5 nodes), poly-Si gate, junction depth...

    http://nanohub.org/resources/3948

  6. Semiconductor Device Education Material

    28 Jan 2008 | Teaching Materials | Contributor(s): Gerhard Klimeck

    This page has moved to "a Wiki page format" When we hear the words, semiconductor device, we may think first of the transistors in PCs or video game consoles, but transistors are the basic...

    http://nanohub.org/resources/edu_semi

  7. Is there any free licence drift diffusion device simulator that supports MOS and bipolar devices

    Open | Responses: 1

    A sequel to this question is : Is Bambi simulator still available ??

    http://nanohub.org/answers/question/39

  8. New Dimension in Performance: Harnessing 3D Integration Technology

    29 Nov 2007 | Online Presentations | Contributor(s): Kerry Bernstein

    Despite generation on generation of scaling, computer chips have remained essentially 2-dimensional. Improvements in on-chip wire delay, and in the total number of inputs and outputs has not been...

    http://nanohub.org/resources/3596

  9. Introduction to nanoMOS

    02 Jul 2007 | Learning Modules | Contributor(s): James K Fodor, Jing Guo

    This learning module introduces nanoHUB users to the nanoMOS simulator. A brief introduction to nanoMOS is presented, followed by voiced presentations featuring the simulator in action. Upon...

    http://nanohub.org/resources/2845

  10. Introduction to Schred

    28 Jun 2007 | Learning Modules | Contributor(s): James K Fodor, Jing Guo

    This learning module introduces nanoHUB users to the Schred simulator. A brief introduction to Schred is presented, followed by voiced presentations featuring the simulator in action. Upon...

    http://nanohub.org/resources/2847

  11. Illinois Tools: MOCA

    28 Mar 2007 | Tools | Contributor(s): Mohamed Mohamed, Umberto Ravaioli, Nahil Sobh, derrick kearney

    A 2D Full-band Monte Carlo (MOCA) Simulation of SOI Device Structures

    http://nanohub.org/resources/moca

  12. CGTB

    15 Jun 2006 | Tools | Contributor(s): Gang Li, Yang Xu, Narayan Aluru

    Compute the charge density distribution and potential variation inside a MOS structure by using a coarse-grained tight binding model

    http://nanohub.org/resources/cgtb

  13. MOSCap

    06 Apr 2006 | Tools | Contributor(s): Akira Matsudaira, Saumitra Raj Mehrotra, Shaikh S. Ahmed, Gerhard Klimeck, Dragica Vasileska

    Capacitance of a MOS device

    http://nanohub.org/resources/moscap

  14. Modeling Single and Dual-Gate Capacitors using SCHRED

    31 Mar 2006 | Learning Modules | Contributor(s): Dragica Vasileska

    SCHRED stands for self-consistent solver of the 1D Poisson and 1D effective mass Schrodinger equation as applied to modeling single gate or dual-gate capacitors. The program incorporates many...

    http://nanohub.org/resources/1148

  15. Schred

    30 Mar 2006 | Tools | Contributor(s): Dragica Vasileska, Shaikh S. Ahmed, Gokula Kannan, Matteo Mannino, Gerhard Klimeck, Mark Lundstrom, Akira Matsudaira, Junzhe Geng

    SCHRED simulation software calculates the envelope wavefunctions and the corresponding bound-state energies in a typical MOS, SOS and a typical SOI structure.

    http://nanohub.org/resources/schred

  16. New Frontiers in Nanocomputing

    03 Nov 2005 | Series

    Welcome to Frontiers in Nanocomputing, a seminar series that focuses on systems issues for nanoelectronics. Our topic was Fundamental Limits of Digital Computation. The questions to each...

    http://nanohub.org/resources/247

  17. CMOS Nanotechnology

    07 Jul 2004 | Online Presentations | Contributor(s): Mark Lundstrom

    In non-specialist language, this talk introduces CMOS technology used for modern electronics. Beginning with an explanation of "CMOS," the speaker relates basic system considerations of transistor...

    http://nanohub.org/resources/166

  18. Schred Source Code Download

    09 Mar 2005 | Downloads | Contributor(s): Dragica Vasileska, Zhibin Ren

    Schred 2.0 calculates the envelope wavefunctions and the corresponding bound-state energies in a typical MOS (Metal-Oxide-Semiconductor) or SOS (Semiconductor-Oxide- Semiconductor) structure and a...

    http://nanohub.org/resources/106

  19. Digital Electronics: Fundamental Limits and Future Prospects

    20 Jan 2004 | Online Presentations | Contributor(s): Konstantin K. Likharev

    I will review some old and some recent work on the fundamental (and not so fundamental) limits imposed by physics of electron devices on their density and power consumption.

    http://nanohub.org/resources/149

  20. Nanoelectronic Scaling Tradeoffs: What does Physics Have to Say?

    23 Sep 2003 | Presentation Materials | Contributor(s): Victor Zhirnov

    Beyond CMOS, several completely new approaches to information-processing and data-storage technologies and architectures are emerging to address the timeframe beyond the current SIA International...

    http://nanohub.org/resources/146

nanoHUB.org, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.