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Tags: MOS capacitors

Description

The MOS capacitor consists of a Metal-Oxide-Semiconductor structure which has the semiconductor substrate with a thin oxide layer and a top metal contact, referred to as the gate. A second metal layer forms an Ohmic contact to the back of the semiconductor and is called the bulk contact.

Learn more about quantum dots from the many resources on this site, listed below. More information on MOS Capacitors can be found here.

Resources (1-20 of 23)

  1. Illinois ECE 440 Solid State Electronic Devices, Lecture 33: MOS Capacitance

    02 Mar 2010 | Online Presentations | Contributor(s): Eric Pop

    http://nanohub.org/resources/8570

  2. Illinois ECE 440 Solid State Electronic Devices, Lecture 31: MOS Capacitor

    02 Mar 2010 | Online Presentations | Contributor(s): Eric Pop

    http://nanohub.org/resources/8576

  3. ECE 612 Lecture 3: MOS Capacitors

    09 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) Short review, 2) Gate voltage / surface potential relation, 3) The flatbandvoltage, 4) MOS capacitance vs. voltage, 5) Gate voltage and inversion layer charge.

    http://nanohub.org/resources/5363

  4. MOS Capacitors: Theory and Modeling

    18 Jul 2008 | Online Presentations | Contributor(s): Dragica Vasileska

    These slides can help users acquire a basic understanding of Metal-Oxide-Semiconductor (MOS) capacitors.

    http://nanohub.org/resources/5087

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