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The MOS capacitor consists of a Metal-Oxide-Semiconductor structure which has the semiconductor substrate with a thin oxide layer and a top metal contact, referred to as the gate. A second metal layer forms an Ohmic contact to the back of the semiconductor and is called the bulk contact.
Learn more about quantum dots from the many resources on this site, listed below. More information on MOS Capacitors can be found here.
ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors
16 Jul 2008 | | Contributor(s):: Xufeng Wang, Dragica Vasileska, Gerhard Klimeck
One-stop-shop for teaching semiconductor device education
Band Structure Lab Demonstration: Bulk Strain
03 Jun 2009 | | Contributor(s):: Gerhard Klimeck
This video shows an electronic structure calculation of bulk Si using Band Structure Lab. Several powerful features of this tool are demonstrated.
CV profile with different oxide thickness
10 Apr 2010 | | Contributor(s):: Saumitra Raj Mehrotra, Gerhard Klimeck
C-V (or capacitance-voltage) profiling refers to a technique used for the characterization of semiconductor materials and devices. C-V testing is often used during the characterization process to determine semiconductor parameters, particularly in MOSCAP and MOSFET structures.C-V measurements...
ECE 612 Lecture 3: MOS Capacitors
out of 5 stars
09 Sep 2008 | | Contributor(s):: Mark Lundstrom
Outline: 1) Short review,2) Gate voltage / surface potential relation,3) The flatbandvoltage,4) MOS capacitance vs. voltage, 5) Gate voltage and inversion layer charge.
Exercise for MOS Capacitors: CV curves and interface and Oxide Charges
03 Aug 2009 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This exercise is designed to teach the students how the CV curves of an ideal MOS Capacitor change in the presence of oxide or interface charges.
Exercise: CV curves for MOS capacitors
02 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This exercise demonstrates to the students how the low-frequency CV curves in MOS capacitors change with changing the gate workfunction, the oxide thickness and the dielectric constant. It also demonstrates the doping variation of the high-frequency CV curves.NSFNSF
Illinois ECE 440 Solid State Electronic Devices, Lecture 31: MOS Capacitor
02 Mar 2010 | | Contributor(s):: Eric Pop
Illinois ECE 440 Solid State Electronic Devices, Lecture 33: MOS Capacitance
Illinois ECE 440: MOS Capacitor Homework
27 Jan 2010 | | Contributor(s):: Mohamed Mohamed
This homework covers Threshold Voltage, MOS Band Diagram, and MOS Capacitance-Voltage Analysis.
Illinois Tools: MOCA
28 Mar 2007 | | Contributor(s):: Mohamed Mohamed, Umberto Ravaioli, Nahil Sobh, derrick kearney, Kyeong-hyun Park
2D Full-band Monte Carlo (MOCA) Simulation for SOI-Based Device Structures
MOS Capacitors: Theory and Modeling
18 Jul 2008 | | Contributor(s):: Dragica Vasileska
These slides can help users acquire a basic understanding of Metal-Oxide-Semiconductor (MOS) capacitors.
MOS-C VFB Calculation: Comparison of Theoretical and Simulation Values
04 Feb 2012 | | Contributor(s):: Stella Quinones
The flatband voltage is calulated based on device physics theory and is compared to the value determined from the simulation of a MOS-Capacitor using the MOSCap simulation tool on the nanoHUB.org website. By completing this exercise, the student is able to compare the mathematical model of the...
MOS-C VFB Calculation: Comparison of Theoretical and Simulation Values (Instructor Copy)
MOSCAP - Theoretical Exercises 1
02 Aug 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
MOSCAP - Theoretical Exercises 2
MOSCAP - Theoretical Exercises 3
MOSCap: First-Time User Guide
27 Mar 2009 | | Contributor(s):: SungGeun Kim, Benjamin P Haley, Gerhard Klimeck
This first-time user guide provides an introduction to MOSCap. The MOSCap tool simulates the one-dimensional (along the growth direction) electrostatics in typical single and dual-gate Metal-Oxide-Semiconductor device structures as a function of device size, geometry, oxide charge, temperature,...
MOSCAP: Theoretical Exercise - High Frequency CV Curves
30 Jun 2009 | | Contributor(s):: Dragica Vasileska
One is required to sketch the high frequency CV curves for different MOS Capacitors configurations.
Notes on the Solution of the Poisson-Boltzmann Equation for MOS Capacitors and MOSFETs, 2nd Edition
24 Oct 2012 | | Contributor(s):: Mark Lundstrom, Xingshu Sun
These notes are intended to complement the discussion on pp. 63 – 68 in Fundamentals of Modern VLSI Devices by Yuan Taur and Tak H. Ning . (Another good reference is Semiconductor Device Fundamentals by R.F. Pierret .) The objective is to understand how to treat MOS electrostatics without...
Quantum Bound States Exercise
16 Jun 2010 | | Contributor(s):: Gerhard Klimeck, Parijat Sengupta, Dragica Vasileska
Exercise BackgroundQuantum-mechanical systems (structures, devices) can be separated into open systems and closed systems. Open systems are characterized with propagating or current carrying states. Closed (or bound) systems are described with localized wave-functions. One such system is a...