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The MOS capacitor consists of a Metal-Oxide-Semiconductor structure which has the semiconductor substrate with a thin oxide layer and a top metal contact, referred to as the gate. A second metal layer forms an Ohmic contact to the back of the semiconductor and is called the bulk contact.
Learn more about quantum dots from the many resources on this site, listed below. More information on MOS Capacitors can be found here.
Exercise for MOS Capacitors: CV curves and interface and Oxide Charges
03 Aug 2009 | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This exercise is designed to teach the students how the CV curves of an ideal MOS Capacitor change in the presence of oxide or interface charges.
Exercise: CV curves for MOS capacitors
out of 5 stars
02 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This exercise demonstrates to the students how the low-frequency CV curves in MOS capacitors change with changing the gate workfunction, the oxide thickness and the dielectric constant. It also demonstrates the doping variation of the high-frequency CV curves.NSFNSF
Illinois ECE 440: MOS Capacitor Homework
27 Jan 2010 | | Contributor(s):: Mohamed Mohamed
This homework covers Threshold Voltage, MOS Band Diagram, and MOS Capacitance-Voltage Analysis.
MOS-C VFB Calculation: Comparison of Theoretical and Simulation Values
04 Feb 2012 | | Contributor(s):: Stella Quinones
The flatband voltage is calulated based on device physics theory and is compared to the value determined from the simulation of a MOS-Capacitor using the MOSCap simulation tool on the nanoHUB.org website. By completing this exercise, the student is able to compare the mathematical model of the...
MOS-C VFB Calculation: Comparison of Theoretical and Simulation Values (Instructor Copy)
MOSCAP - Theoretical Exercises 1
02 Aug 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
MOSCAP - Theoretical Exercises 2
MOSCAP - Theoretical Exercises 3
MOSCap: First-Time User Guide
27 Mar 2009 | | Contributor(s):: SungGeun Kim, Benjamin P Haley, Gerhard Klimeck
This first-time user guide provides an introduction to MOSCap. The MOSCap tool simulates the one-dimensional (along the growth direction) electrostatics in typical single and dual-gate Metal-Oxide-Semiconductor device structures as a function of device size, geometry, oxide charge, temperature,...
MOSCAP: Theoretical Exercise - High Frequency CV Curves
30 Jun 2009 | | Contributor(s):: Dragica Vasileska
One is required to sketch the high frequency CV curves for different MOS Capacitors configurations.
Notes on the Solution of the Poisson-Boltzmann Equation for MOS Capacitors and MOSFETs, 2nd Edition
24 Oct 2012 | | Contributor(s):: Mark Lundstrom, Xingshu Sun
These notes are intended to complement the discussion on pp. 63 – 68 in Fundamentals of Modern VLSI Devices by Yuan Taur and Tak H. Ning . (Another good reference is Semiconductor Device Fundamentals by R.F. Pierret .) The objective is to understand how to treat MOS electrostatics without...
Quantum Bound States Exercise
16 Jun 2010 | | Contributor(s):: Gerhard Klimeck, Parijat Sengupta, Dragica Vasileska
Exercise BackgroundQuantum-mechanical systems (structures, devices) can be separated into open systems and closed systems. Open systems are characterized with propagating or current carrying states. Closed (or bound) systems are described with localized wave-functions. One such system is a...
SCHRED Exercise: MOS Capacitor Analysis
20 Jul 2010 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
The objective of this exercise is to examine the influence of semiclassical and quantum-mechanical charge description on the low-frequency CV-curves. It also teaches one the influence of poly-gate depletion on the low-frequency CV-curves.
Schred: Exercise 1
06 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This exercise illustrates basic SCHRED capabilities for modeling MOS capacitors and also illustrates how the bound states distribution in energy changes with doping. The average distance of the carriers calculated semi-classically and quantum-mechanically is also examined since it is important...
Schred: Exercise 3
This exercise examines the degradation of the total gate capacitance with technology generation due to Maxwell-Boltzmann instead of Fermi-Dirac statistics, quantum-mechanical charge description and depletion of the polysilicon gates.www.eas.asu.edu/~vasileskNSF