## Tags: MOS capacitors

### Description

The MOS capacitor consists of a Metal-Oxide-Semiconductor structure which has the semiconductor substrate with a thin oxide layer and a top metal contact, referred to as the gate. A second metal layer forms an Ohmic contact to the back of the semiconductor and is called the bulk contact.

Learn more about quantum dots from the many resources on this site, listed below. More information on MOS Capacitors can be found here.

### Teaching Materials (1-15 of 15)

1. 03 Aug 2009 | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

This exercise is designed to teach the students how the CV curves of an ideal MOS Capacitor change in the presence of oxide or interface charges.

2. 02 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

This exercise demonstrates to the students how the low-frequency CV curves in MOS capacitors change with changing the gate workfunction, the oxide thickness and the dielectric constant. It also demonstrates the doping variation of the high-frequency CV curves.NSFNSF

3. 27 Jan 2010 | | Contributor(s):: Mohamed Mohamed

This homework covers Threshold Voltage, MOS Band Diagram, and MOS Capacitance-Voltage Analysis.

4. 04 Feb 2012 | | Contributor(s):: Stella Quinones

The flatband voltage is calulated based on device physics theory and is compared to the value determined from the simulation of a MOS-Capacitor using the MOSCap simulation tool on the nanoHUB.org website. By completing this exercise, the student is able to compare the mathematical model of the...

5. 04 Feb 2012 | | Contributor(s):: Stella Quinones

The flatband voltage is calulated based on device physics theory and is compared to the value determined from the simulation of a MOS-Capacitor using the MOSCap simulation tool on the nanoHUB.org website. By completing this exercise, the student is able to compare the mathematical model of the...

6. 02 Aug 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

7. 02 Aug 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

8. 02 Aug 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

9. 27 Mar 2009 | | Contributor(s):: SungGeun Kim, Benjamin P Haley, Gerhard Klimeck

This first-time user guide provides an introduction to MOSCap. The MOSCap tool simulates the one-dimensional (along the growth direction) electrostatics in typical single and dual-gate Metal-Oxide-Semiconductor device structures as a function of device size, geometry, oxide charge, temperature,...

10. 30 Jun 2009 | | Contributor(s):: Dragica Vasileska

One is required to sketch the high frequency CV curves for different MOS Capacitors configurations.

11. 24 Oct 2012 | | Contributor(s):: Mark Lundstrom, Xingshu Sun

These notes are intended to complement the discussion on pp. 63 – 68 in Fundamentals of Modern VLSI Devices by Yuan Taur and Tak H. Ning [1]. (Another good reference is Semiconductor Device Fundamentals by R.F. Pierret [2].) The objective is to understand how to treat MOS electrostatics without...

12. 16 Jun 2010 | | Contributor(s):: Gerhard Klimeck, Parijat Sengupta, Dragica Vasileska

Exercise BackgroundQuantum-mechanical systems (structures, devices) can be separated into open systems and closed systems. Open systems are characterized with propagating or current carrying states. Closed (or bound) systems are described with localized wave-functions. One such system is a...

13. 20 Jul 2010 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

The objective of this exercise is to examine the influence of semiclassical and quantum-mechanical charge description on the low-frequency CV-curves. It also teaches one the influence of poly-gate depletion on the low-frequency CV-curves.

14. 06 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

This exercise illustrates basic SCHRED capabilities for modeling MOS capacitors and also illustrates how the bound states distribution in energy changes with doping. The average distance of the carriers calculated semi-classically and quantum-mechanically is also examined since it is important...

15. 06 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

This exercise examines the degradation of the total gate capacitance with technology generation due to Maxwell-Boltzmann instead of Fermi-Dirac statistics, quantum-mechanical charge description and depletion of the polysilicon gates.www.eas.asu.edu/~vasileskNSF